× |
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Materials
-
Material:
Silicon
-
Diameter:
100mm
-
Type:
P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
(111)
-
Resistivity:
1-20
-
Thickness:
500-550µm
-
Surface:
P/E
-
Grade:
PRIME
-
Delivery Time:
15-30 days
|
$40.00 |
|
$40.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
100mm
-
Type:
P
-
Dopant:
Boron
-
Growth Method:
FZ
-
Orientations:
(100)
-
Resistivity:
>3000
-
Thickness:
450-500µm
-
Surface:
P/P
-
Grade:
PRIME
-
Delivery Time:
15-30 days
|
$100.00 |
|
$100.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[211] ±0.5°
-
Type:
C/C
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:Sb
-
Resistivity:
0.01-0.02
-
Thickness:
4"
-
Surface:
1,600 ±100
-
Grade:
SEMI, 1Flat,Wafers can be polished for additional fee, Empak cst
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
E/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
5-10 {5.9-9.1}
-
Thickness:
4"
-
Surface:
2,150
-
Grade:
SEMI Prime, 1Flat,Measured thickness 2,150±7µm, TTV<5µm,Can be sold individually
-
Delivery Time:
15-30 days
|
$40.00 |
|
$40.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100-9.74°towards[111]] ±0.1°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
FZ50-100
-
Thickness:
6"
-
Surface:
480
-
Grade:
SEMI Prime, 1Flat (57.5mm), Empak cst, TTV15,000µ
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[17,10,10]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
3-7
-
Thickness:
6"
-
Surface:
700
-
Grade:
SEMI Prime, Notch, Empak cst
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
|