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× Placeholder Materials
  • Material:

    Silicon
  • Diameter:

    [111-2.5°] ±1°
  • Type:

    NOP/EON
  • Dopant:

    Boron
  • Growth Method:

    CZ
  • Orientations:

    p-type Si:B
  • Resistivity:

    2-8
  • Thickness:

    4"
  • Surface:

    450
  • Grade:

    SEMI Prime, 1Flat,Both sides with 2µm SiO2, both sides with 250nm low stress silicon nitride over the oxide, Empak cst
  • Delivery Time:

    15-30 days
$150.00
$150.00
× Placeholder Materials
  • Material:

    Silicon
  • Diameter:

    [100] ±1°
  • Type:

    P/P
  • Dopant:

    Boron
  • Growth Method:

    CZ
  • Orientations:

    n-type Si:P
  • Resistivity:

    FZ1-5 {2.5-3.0}
  • Thickness:

    6"
  • Surface:

    280
  • Grade:

    PV Reference wafers,SEMI Prime, 2Flats {PF at ±1°, SF 135° from PF},Measured MCC Lifetime>18,738µs
  • Delivery Time:

    15-30 days
$150.00
$150.00
× Placeholder Materials
  • Material:

    Silicon
  • Diameter:

    [111] ±0.5°
  • Type:

    C/C
  • Dopant:

    Boron
  • Growth Method:

    CZ
  • Orientations:

    n-type Si:P
  • Resistivity:

    FZ5,000-13,000
  • Thickness:

    2"
  • Surface:

    6,350 ±100
  • Grade:

    NO Flats, Individual cst
  • Delivery Time:

    15-30 days
$100.00
$100.00

Cart totals

Subtotal $400.00
Shipping

Shipping to CA.

Tax $0.00
Total $400.00 USD
Proceed to checkout