|
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[110] ±0.5°
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
3-10
-
Thickness:
4"
-
Surface:
400
-
Grade:
SEMI Prime, 2Flats {PF at , SF 180° from PF}, Empak cst
-
Delivery Time:
15-30 days
|
$50.00 |
|
$50.00 |
|
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[311] ±1°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
10-35
-
Thickness:
6"
-
Surface:
650
-
Grade:
Prime, 2Flats, Empak cst
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
|
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[111] ±0.5°
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
25-35
-
Thickness:
3"
-
Surface:
1,400
-
Grade:
SEMI Prime, 1Flat, in individual cassettes (sold in groups of 5 wafers)
-
Delivery Time:
15-30 days
|
$50.00 |
|
$50.00 |
|
|