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× Placeholder Materials
  • Material:

    Silicon
  • Diameter:

    [100]
  • Type:

    P/E
  • Dopant:

    Boron
  • Growth Method:

    CZ
  • Orientations:

    p-type Si:B
  • Resistivity:

    1-20
  • Thickness:

    4"
  • Surface:

    360
  • Grade:

    SEMI Prime, 1Flat, Empak cst
  • Delivery Time:

    15-30 days
$40.00
$40.00
× Placeholder Materials
  • Material:

    Silicon
  • Diameter:

    [111-7°towards[110]] ±0.5°
  • Type:

    P/P
  • Dopant:

    Boron
  • Growth Method:

    CZ
  • Orientations:

    p-type Si:B
  • Resistivity:

    FZ>2,000
  • Thickness:

    2"
  • Surface:

    279
  • Grade:

    SEMI Prime, 1Flat, hard cst
  • Delivery Time:

    15-30 days
$100.00
$100.00
× Placeholder Materials
  • Material:

    Silicon
  • Diameter:

    [100]
  • Type:

    P/P
  • Dopant:

    Boron
  • Growth Method:

    CZ
  • Orientations:

    p-type Si:B
  • Resistivity:

    0.001-0.007
  • Thickness:

    4"
  • Surface:

    1,975
  • Grade:

    SEMI Prime, 2Flats,Free of Striations,Individual cst sealed in a group of 5 wafers
  • Delivery Time:

    15-30 days
$80.00
$80.00
× Placeholder Materials
  • Material:

    Silicon
  • Diameter:

    76.2mm
  • Type:

    P
  • Dopant:

    Boron
  • Growth Method:

    CZ
  • Orientations:

    (100)
  • Resistivity:

    1-20
  • Thickness:

    350-400µm
  • Surface:

    P/E/DTOx
  • Grade:

    PRIME
  • Delivery Time:

    15-30 days
$50.00
$50.00
× Placeholder Materials
  • Material:

    Silicon
  • Diameter:

    [100]
  • Type:

    P/P
  • Dopant:

    Boron
  • Growth Method:

    CZ
  • Orientations:

    p-type Si:B
  • Resistivity:

    1-100
  • Thickness:

    6"
  • Surface:

    2,200
  • Grade:

    SEMI Prime, 1Flat (57.5mm),TTV<1µm,Individual cst
  • Delivery Time:

    15-30 days
$200.00
$200.00
× Placeholder Materials
  • Material:

    Silicon
  • Diameter:

    50.8mm
  • Type:

    P
  • Dopant:

    Phos
  • Growth Method:

    CZ
  • Orientations:

    (100.00)
  • Resistivity:

    1-20
  • Thickness:

    250-300µm
  • Surface:

    P/E
  • Grade:

    PRIME
  • Delivery Time:

    15-30 days
$100.00
$100.00
× Placeholder Materials
  • Material:

    Silicon
  • Diameter:

    100mm
  • Type:

    P
  • Dopant:

    Boron
  • Growth Method:

    CZ
  • Orientations:

    (100)
  • Resistivity:

    1-20
  • Thickness:

    500-550µm
  • Surface:

    P/E/DTOx
  • Grade:

    PRIME
  • Delivery Time:

    15-30 days
$40.00
$40.00
× Placeholder Materials
  • Material:

    Silicon
  • Diameter:

    [100]
  • Type:

    P/P
  • Dopant:

    Boron
  • Growth Method:

    CZ
  • Orientations:

    p-type Si:B
  • Resistivity:

    0.001-0.005
  • Thickness:

    44×44µm
  • Surface:

    500
  • Grade:

    Silicon Frames:44mm square with 40mm square removed from center (drawing available on request)
  • Delivery Time:

    15-30 days
$100.00
$100.00
× Placeholder Materials
  • Material:

    Silicon
  • Diameter:

    [100-4°towards[110]] ±0.5°
  • Type:

    P/E
  • Dopant:

    Boron
  • Growth Method:

    CZ
  • Orientations:

    p-type Si:B
  • Resistivity:

    0.01-0.02
  • Thickness:

    3"
  • Surface:

    381
  • Grade:

    SEMI Prime, Empak cst
  • Delivery Time:

    15-30 days
$80.00
$80.00
× Placeholder Materials
  • Material:

    Silicon
  • Diameter:

    [111] ±0.5°
  • Type:

    P/P
  • Dopant:

    Boron
  • Growth Method:

    CZ
  • Orientations:

    n-type Si:P
  • Resistivity:

    FZ2,700-3,300
  • Thickness:

    4"
  • Surface:

    275
  • Grade:

    SEMI Prime, 2Flats, Empak cst
  • Delivery Time:

    15-30 days
$80.00
$80.00
× Placeholder Materials
  • Material:

    Silicon
  • Diameter:

    [100]
  • Type:

    P/P
  • Dopant:

    Boron
  • Growth Method:

    CZ
  • Orientations:

    p-type Si:B
  • Resistivity:

    1-30
  • Thickness:

    2"
  • Surface:

    775 ±10
  • Grade:

    SEMI Prime, 1Flat, TTV<5µm,LaserMark, TTV and Bow measured for every wafer,hard cst
  • Delivery Time:

    15-30 days
$100.00
$100.00
× Placeholder Materials
  • Material:

    Silicon
  • Diameter:

    [100]
  • Type:

    P/P
  • Dopant:

    Boron
  • Growth Method:

    CZ
  • Orientations:

    p-type Si:B
  • Resistivity:

    5-35
  • Thickness:

    2"
  • Surface:

    762 ±12
  • Grade:

    SEMI Prime,NO Flats, TTV<1µm, Bow<2.5µm, Warp<4µm,hard cst,
  • Delivery Time:

    15-30 days
$100.00
$100.00
× Placeholder Materials
  • Material:

    Silicon
  • Diameter:

    [100]
  • Type:

    P/P
  • Dopant:

    Boron
  • Growth Method:

    CZ
  • Orientations:

    p-type Si:B
  • Resistivity:

    1-30
  • Thickness:

    3"
  • Surface:

    600
  • Grade:

    SEMI Prime, 2Flats,TTV<2µm, Empak cst
  • Delivery Time:

    15-30 days
$130.00
$130.00
× Placeholder Materials
  • Material:

    Silicon
  • Diameter:

    [100]
  • Type:

    P/P
  • Dopant:

    Boron
  • Growth Method:

    CZ
  • Orientations:

    n-type Si:P
  • Resistivity:

    FZ>100
  • Thickness:

    4"
  • Surface:

    300
  • Grade:

    SEMI Prime, 2Flats, TTV200µs, Empak cst
  • Delivery Time:

    15-30 days
$80.00
$80.00

Cart totals

Subtotal $1,280.00
Shipping

Shipping to CA.

Tax $0.00
Total $1,280.00 USD
Proceed to checkout