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× |
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Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
5-35
-
Thickness:
6"
-
Surface:
725
-
Grade:
SEMI Prime, 1 SEMI Flat(57.5mm),TTV<5µm, TIR<1µm, Bow<10µm, Warp<20µm, Wafers await final polish, Empak cst
-
Delivery Time:
15-30 days
|
$150.00 |
|
$150.00 |
|
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
30-80
-
Thickness:
4"
-
Surface:
640
-
Grade:
SEMI Prime, 2Flats, Empak cst
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
|
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
FZ100-200
-
Thickness:
4"
-
Surface:
525
-
Grade:
SEMI Prime, 1Flat,MCC Lifetime>8,025µs,Empak cst
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
|
|