Search Wafer Products Delivery Time:All15-30 daysDiameter:All[011] ±0.5°[011] ±2°[100-0.2°towards[011]] ±0.1°[100-0.5°towards[110]] ±0.2°[100-0.60°towards[110]] ±0.05°[100-1°towards[110]] ±0.5°[100-10°towards[110]] ±0.5°[100-2°towards[110]] ±0.5°[100-25°towards[110]] ±0.5°[100-25°towards[110]] ±1°[100-28°towards[110]] ±1°[100-4.0°] ±0.5°[100-4°] ±0.5°[100-4°towards[110]] ±0.5°[100-6.0°towards[111]] ±0.5°[100-6°] ±0.5°[100-6°towards[110]] ±0.5°[100-6°towards[111]] ±0.5°[100-9.7°towards[110]] ±0.5°[100-9.736°towards[111]] ±0.1°[100-9.74°] ±0.1°[100-9.74°towards[111]] ±0.1°[100-9°towards[001]][100][100] ±0..5°[100] ±0.05°[100] ±0.1°[100] ±0.2°[100] ±0.3°[100] ±1.0°[100] ±1°[110][110] ±0.1°[110] ±0.2°[110] ±0.25°[110] ±0.5°[110] ±1.0°[110] ±1°[111-0.2°towards[11-2]] ±0.1°[111-1°towards[110]] ±0.5°[111-2.5°] ±0.5°[111-2.5°] ±1°[111-2°towards[110]][111-3°] ±0.5°[111-4°] ±0.5°[111-4°towards[110]] ±0.5°[111-7°towards[110]] ±0.5°[111-8°towards[110]] ±0.5°[111][111] ±0.02°[111] ±0.1°[111] ±0.2°[111] ±0.25°[111] ±0.3°[111] ±0.5°[111] ±1.0°[111] ±1°[111] ±2°[112-5.0°towards[11-1]] ±0.5°[112-5°towards[11-1]] ±0.5°[135] ±0.5°[17,10,10][211-5°] ±0.5°[211] ±0.1°[211] ±0.5°[211] ±1°[221] ±0.5°[221] ±1°[311] ±0.5°[311] ±1°[331] ±0.5°[411] ±1°[5,5,12] ±0.5°[510][510] ±0.5°[511] ±0.5°[522][522] ±0.5°[522] ±1°[531] ±0.5°[531] ±1.0°[533] ±0.3°[533] ±0.5°[551] ±0.3°[551] ±0.5°[553] ±0.3°[611] ±0.5°[753] ±0.5°[755][755] ±0.5°[771] ±0.3°[773] ±0.5°[911] ±0.5°100mm125mm150mm25.4mm38.1mm50.8mm76.2mmPoly.Dopant:AllAnyAsBoronCZePakFeGaPhosSbSiSingle WaferSingle Wafer ShipperUndopedVGFZnGrade:All1Flat, Individual cst (can be ordered singly)1Flat, MCC Lifetime>1,000µs, in unsealed individual hard csts1Flat,Small diameter: 99.25±0.25mm, Packs of 4 & 5 wafersBROKEN L/L wafers, in 2 piecesBroken P/E wafer, 1Flat, Soft cstBroken wafer (shattered into many pieces)BROKENinto a dozen large pieces ranging from 65% of wafer to 5% and small pieces as wellCleanClean RoomEP!EPIGallium dopant Concentrate (each with measured Gallium content)Good Front side, Back-Side with large scratch on back, SEMI, 1Flat, TTV<5µm, Individual cstJEIDA Prime, Empak cstJEIDA Prime,TTV<1µm,LaserMark, Empak cstNO Flats, a set of 4 rods sealed in polyehtylene foilNO Flats, Empak cstNO Flats, hard cstNO Flats, Individual cstNO Flats, Individual cst in group of 3 wafersNon-SEMI-standard diameter,SEMI Flat(one), MCC Lifetime>1,000µs, Empak cstPRIMEPrime 25.6x25.6mm Silicon FramesPrime front side, Back-side not Prime, 2Flats, Empak cstPrime With Lasermark,NO Flats, Empak cstPrime, 1Flat {42.5mm long, 15±1° CW from }, Back-side Acid etched, Empak cstPrime, 1Flat at , Empak cstPrime, 1Flat at , TTV<5µm , Front-Side LaserMark, Empak cstPrime, 1Flat at ±0.5°, Individual csts in Group of 5 wafersPrime, 1Flat, Empak cstPrime, 1Flat, hard cstPrime, 1Flat, MCC Lifetime>1,000µs, Individual cst, Group of 2 wafersPrime, 1Flat, TTV<5µm, Bow/Warp<10µm, Empak cstPrime, 1Flat, TTV<5µm, Empak cstPrime, 1Flat,TTV<1µm,Empak cstPrime, 2Flats (PF at , SF at CW 70.5° from PF), hard cstPrime, 2Flats {PF@, SF@ CCW 70±1° from PF}, MCC Lifetime>1,000µs, Empak cstPrime, 2Flats, Empak cstPrime, 2Flats,PV FZ, MCC Lifetime=21,294µs,Empak cstPrime, 2Flats,TTV<3µm, Empak cstPrime,NO Flats, Back-side rough etched, Empak cstPrime,NO Flats, Empak cstPrime,NO Flats, hard cstPrime,NO Flats, hard cst, MCC Lifetime>1,000µsPrime,NO Flats, Individual cassettes, In Packs of 10, 10, 10, 10, 4 wafersPrime,NO Flats, Individual cstPrime,NO Flats, Individual cst, Group of 3 wafersPrime,NO Flats, Individual cst, Group of 4 wafersPrime,NO Flats, Individual cst, Groups of 5 + 10 wafersPrime,NO Flats, Individual cst, Pack of 5 wafersPrime,NO Flats, Individual cst, Sold in Groups of 5 wafersPrime,NO Flats, Individual cst, Sold individuallyPrime,NO Flats, MCC Lifetime>1,000µs, Empak cstPrime,NO Flats, MCC Lifetime>1,000µs, Individual cst in Groups of 5 wafersPrime,NO Flats, MCC Lifetime>1,000µs, No Edge Rounding, Minor edge-chips, In single wafer cst, Sold in groups of 5 wafersPrime,NO Flats, Packed in Groups of 10 wafersPrime,NO Flats, Polished side Ra<3µ rms, hard cstPrime,NO Flats, Sealed in a multi-wafer box of 5 wafersPrime,NO Flats, TTV<5µm, Empak cstPrime,NO Flats, TTV<5µm, hard cstPrime,TTV<5µm, 25.6x25.6mmSilicon FramesPrime,TTV<5µm, One Flat at , 32.5±2.5mm long, Empak cstPV Reference wafers,SEMI Prime, 2Flats {PF at ±1°, SF 135° from PF},Measured MCC Lifetime>18,738µsPV SEMI Prime, 2Flats, TTV2,000µs{Measured 21,143µs},Empak cstPV SEMI Prime, 2Flats,TTV6,202µs,Empak cstRoomSEMI 1Flat, Both sides polished (Front Prime and Epi-Ready, Back scratched),TTV<0.3µm,Empak cstSEMI notch Prime, Empak cstSEMI notch Prime, Lasermark.Extra low TTV for extra charge, Empak cstSEMI Notch Prime, TTV<5µm, Empak cstSEMI Notch Prime, TTV<5µm, LaserMark, Empak cstSEMI notch Prime, TTV<5µm, with Back-Side Lasermark, Empak cstSEMI notch Prime,TTV<1µm, with LaserMark,Empak cstSEMI notch Prime,TTV<2µm,Empak cstSEMI notch, Empak cstSEMI notchBROKEN - one piece ~50% of wafers other pieces ~20% of wafer, Empak cstSEMI Prime (light haze), 2Flats,Free of Striations,Individual cst, Groups of 10 wafersSEMI Prime 2Flats {PF at ±0.5°,SF at ±5.0° CW 109.5° from PF}, TTV<5µm, Empak cstSEMI Prime Notch, TTV<5µm, Bow<10µm, Warp<30µm, Empak cstSEMI Prime Notch,Surface Metals<5E10a/cm²,Empak cstSEMI Prime with Lasermark, 1Flat, Empak cstSEMI Prime, 1 Flat 32.5mm @ ,TTV<3µm,Empak cstSEMI Prime, 1 Flat at , Individual cst, sold singlySEMI Prime, 1 Flat, TTV<8µm, Bow<10µm, Warp1,000µs, Empak cstSEMI Prime, 1 JEIDA Flat (47.5mm),TTV1,000µs, Empak cstSEMI Prime, 1 JEIDA Flat(47.5mm),TTV<0.6µm, Bow<8µm, Warp<18µm, with data on each wafer, identified by LaserMark,in Empak cstSEMI Prime, 1 JEIDA Flat(47.5mm),TTV<5µm, TIR<1µm, Bow<10µm, Warp<20µm, with Laser Mark,Empak cstSEMI Prime, 1 SEMI Flat 57.5mm at ±0.5°, Oxygen=(3-9)ppma, Carbon<1ppma,Back-side Acid etched,Empak cstSEMI Prime, 1 SEMI Flat(57.5mm),TTV<5µm, TIR<1µm, Bow<10µm, Warp<20µm, Wafers await final polish, Empak cstSEMI Prime, 1Flat (57.5mm), Can be sold individuallySEMI Prime, 1Flat (57.5mm), Empak cstSEMI Prime, 1Flat (57.5mm), Empak cst , With Front-Side LaserMarkSEMI Prime, 1Flat (57.5mm), Empak cst, MCC Lifetime>1,000µsSEMI Prime, 1Flat (57.5mm), Empak cst, TTV<7µmSEMI Prime, 1Flat (57.5mm), Empak cst, TTV15,000µSEMI Prime, 1Flat (57.5mm), Individual cst, Groups of 5 wafersSEMI Prime, 1Flat (57.5mm), Individual cst, TTV<5µm, Sold in packs of 5 wafersSEMI Prime, 1Flat (57.5mm), MCC Lifetime>1,000µs, Empak cstSEMI Prime, 1Flat (57.5mm), MCC Lifetime>1,705µs, Empak cstSEMI Prime, 1Flat (57.5mm), MCC Lifetime>5,000µs, Empak cstSEMI Prime, 1Flat (57.5mm), Sold as packs of 3 wafersSEMI Prime, 1Flat (57.5mm), Sold IndividuallySEMI Prime, 1Flat (57.5mm), TTV<4µm, Empak cstSEMI Prime, 1Flat (57.5mm), TTV<5µm, Empak cstSEMI Prime, 1Flat (57.5mm), TTV<5µm, LTO (0.3-0.6)µm thick, in Empak cassettes of 7, 16, 19 wafersSEMI Prime, 1Flat (57.5mm), TTV<5µm, sealed in stacked trays of 1 & 3 waferSEMI Prime, 1Flat (57.5mm), TTV<5µm,Groups of 2 + 10 wafersSEMI Prime, 1Flat (57.5mm), TTV<5µm,Groups of 5 wafersSEMI Prime, 1Flat (57.5mm), TTV<6µm, Empak cstSEMI Prime, 1Flat (57.5mm), TTV<7µm, Bow<10µm, Warp<20µm, Empak cstSEMI Prime, 1Flat (57.5mm), TTV<8µm, Bow<10µm, Warp1,000µs, Empak cstSEMI Prime, 1Flat (57.5mm), TTV<8µm, in Empak cassettes of 2 & 4 wafersSEMI Prime, 1Flat (57.5mm), TTV1,200µs, Empak cstSEMI Prime, 1Flat (57.5mm), TTV10,000µs,Empak cstSEMI Prime, 1Flat (57.5mm), TTV2,400µsSEMI Prime, 1Flat (57.5mm), TTV500µs, Empak cstSEMI Prime, 1Flat (57.5mm), wiith LaserMark, Empak cstSEMI Prime, 1Flat (57.5mm), with LaserMark, Empak cstSEMI Prime, 1Flat (57.5mm),Lifetime=15,799µs,Empak cstSEMI Prime, 1Flat (57.5mm),MCC Lifetime>6,000µs,Empak cstSEMI Prime, 1Flat (57.5mm),MCC Lifetime>6,934µs,Empak cstSEMI Prime, 1Flat (57.5mm),MCC Lifetime=15,700µs,Empak cstSEMI Prime, 1Flat (57.5mm),TTV<10µm, Bow/Warp<20µm,Empak cstSEMI Prime, 1Flat (57.5mm),TTV<10µm,Individual cst, Group of 4 wafersSEMI Prime, 1Flat (57.5mm),TTV<1µm,Empak cstSEMI Prime, 1Flat (57.5mm),TTV<1µm,Individual cstSEMI Prime, 1Flat (57.5mm),TTV<1µm,Individual cst, Groups of 5 wafersSEMI Prime, 1Flat (57.5mm),TTV<1µm,with front side LaserMark, Empak cstSEMI Prime, 1Flat (57.5mm),TTV<2µm,Empak cstSEMI Prime, 1Flat (57.5mm),TTV<3µm, Empak cstSEMI Prime, 1Flat (57.5mm),TTV<3µm, in single wafer cstSEMI Prime, 1Flat (57.5mm),TTV<3µm, in stacked trays of 5 wafersSEMI Prime, 1Flat (57.5mm),TTV<3µm,Individual cst, groups of 5 wafersSEMI Prime, 1Flat (57.5mm),TTV1,000µs, Empak cstSEMI Prime, 1Flat {32.5±2.5@110±1°}, MCC Lifetime>1,000µs, Empak cstSEMI Prime, 1Flat @ , made from Topsil Ingot, MCC Lifetime>1,000µs, Individual cstSEMI Prime, 1Flat @ [111], Free of Striations, Empak cstSEMI Prime, 1Flat at , Empak cstSEMI Prime, 1Flat at , Free of Striations, Empak cstSEMI Prime, 1Flat at , hard cstSEMI Prime, 1Flat at , MCC Lifetime>1,000µs, hard cstSEMI Prime, 1Flat at , MCC Lifetime>1,200µs, hard cstSEMI Prime, 1Flat at , TTV<5µm, Empak cstSEMI Prime, 1Flat at , TTV1,600µs, Empak cstSEMI Prime, 1Flat at (parallel to ), 0.75" long, hard cstSEMI Prime, 1Flat at (parallel to ), hard cstSEMI Prime, 1Flat at ±0.5°, hard cstSEMI Prime, 1Flat at ±1°, hard cstSEMI Prime, 1Flat, Back-Side LaserMark, Empak cstSEMI Prime, 1Flat, Bow/Warp<20µm, Empak cstSEMI Prime, 1Flat, Empak cstSEMI Prime, 1Flat, Empak cst, MCC Lifetime>3,000µsSEMI Prime, 1Flat, Empak cst, TTV<1µmSEMI Prime, 1Flat, Empak cst, TTV<5µmSEMI Prime, 1Flat, Empak cst, TTV1,000µsSEMI Prime, 1Flat, hard cstSEMI Prime, 1Flat, hard cst, Packs of 5 wafersSEMI Prime, 1Flat, hard cst, TTV1,000µsSEMI Prime, 1Flat, in hard cassettes of 1 & 2 wafersSEMI Prime, 1Flat, in individual cassettes (sold in groups of 5 wafers)SEMI Prime, 1Flat, In single wafer cassettes, Sealed in Groups of 5SEMI Prime, 1Flat, Individual cstSEMI Prime, 1Flat, Individual cst (Group of 3 wafers)SEMI Prime, 1Flat, Individual cst sealed in a group of 2 wafersSEMI Prime, 1Flat, Individual cst, Group of 2 wafersSEMI Prime, 1Flat, Individual cst, In Group of 8 wafersSEMI Prime, 1Flat, Individual cst, In Groups of 5 wafersSEMI Prime, 1Flat, Individual cst, in Pack of 5 wafersSEMI Prime, 1Flat, LaserMark and maps of actual thickness and TTV,TTV1,000µs, Empak cstSEMI Prime, 1Flat, MCC Lifetime measured>2,000µs, in Groups of 1 waferSEMI Prime, 1Flat, MCC Lifetime>1,000µs, Back-side Acid-Etched, TTV<10µm, Bow<15µm, Warp<30µm, Empak cstSEMI Prime, 1Flat, MCC Lifetime>1,000µs, Back-side Acid-Etched, TTV<5µm, Bow<15µm, Warp<30µm, Empak cstSEMI Prime, 1Flat, MCC Lifetime>1,000µs, Back-Side Lasermark, Empak cstSEMI Prime, 1Flat, MCC Lifetime>1,000µs, Empak cstSEMI Prime, 1Flat, MCC Lifetime>1,000µs, Empak cst,Front-Side Prime, Back-side scratchesSEMI Prime, 1Flat, MCC Lifetime>1,000µs, hard cstSEMI Prime, 1Flat, MCC Lifetime>1,000µs, in hard cstSEMI Prime, 1Flat, MCC Lifetime>1,000µs, LaserMark, Empak cstSEMI Prime, 1Flat, MCC Lifetime>1,000µs, TTV<5µm, Bow/Warp<20µm, hard cstSEMI Prime, 1Flat, MCC Lifetime>1,000µs, TTV<5µm, hard cstSEMI Prime, 1Flat, MCC Lifetime>1,000µs,TTV<1µm,Empak cstSEMI Prime, 1Flat, MCC Lifetime>1,300µs, Empak cstSEMI Prime, 1Flat, MCC Lifetime>1,500µs, Empak cstSEMI Prime, 1Flat, MCC Lifetime>1,500µs, Individual cstSEMI Prime, 1Flat, MCC Lifetime>1,700µs, hard cstSEMI Prime, 1Flat, MCC Lifetime>2,000µs, hard cstSEMI Prime, 1Flat, MCC Lifetime>2,000µs, Individual cst in Group of 5 wafersSEMI Prime, 1Flat, MCC Lifetime>200µs, Empak cstSEMI Prime, 1Flat, MCC Lifetime>3,000µs,TTV<1µm,Empak cstSEMI Prime, 1Flat, MCC Lifetime>3,460µs, Empak cstSEMI Prime, 1Flat, MCC Lifetime>3,500µs, Empak cstSEMI Prime, 1Flat, MCC Lifetime>500µs, Empak cstSEMI Prime, 1Flat, MCC Lifetime>500µs, hard cstSEMI Prime, 1Flat, Particle Count 1,000µs, Empak cstSEMI Prime, 1Flat, Soft cstSEMI Prime, 1Flat, TTV<10µm, Empak cstSEMI Prime, 1Flat, TTV<3µm, hard cstSEMI Prime, 1Flat, TTV<5µm, Empak cstSEMI Prime, 1Flat, TTV<5µm, Front-side LaserMark, Empak cstSEMI Prime, 1Flat, TTV<5µm, hard cstSEMI Prime, 1Flat, TTV<5µm, hard cst, Groups of 10 and 5 wafersSEMI Prime, 1Flat, TTV<5µm, hard cst, Groups of 10 and 6 wafersSEMI Prime, 1Flat, TTV<5µm, Individual cst, Group of 5 wafersSEMI Prime, 1Flat, TTV<5µm, Individual cst, Groups 4 wafersSEMI Prime, 1Flat, TTV<5µm, LaserMark, Empak cstSEMI Prime, 1Flat, TTV<5µm, with LaserMark, Empak cstSEMI Prime, 1Flat, TTV<5µm,Bow/Warp<10µm,Empak cstSEMI Prime, 1Flat, TTV<5µm,LaserMark, Thickness, TTV, Bow data recorded for each wafer,hard cstSEMI Prime, 1Flat, TTV<5µm,LaserMark, TTV and Bow measured for every wafer,hard cstSEMI Prime, 1Flat, TTV<5µm,with LaserMark,Empak cstSEMI Prime, 1Flat, TTV<7µm, Bow<10µm, Warp1,000µs, Empak cstSEMI Prime, 1Flat, TTV<7µm, Empak cstSEMI Prime, 1Flat, TTV<8µm, Empak cst, In Groups of 2 wafersSEMI Prime, 1Flat, TTV1,000µsSEMI Prime, 1Flat, TTV1,000µs, Back side Acid-Etched, Empak cstSEMI Prime, 1Flat, TTV1,000µs, Back side Etched, Empak cstSEMI Prime, 1Flat, TTV1,000µs, Empak cstSEMI Prime, 1Flat, TTV1,000µs, hard cstSEMI Prime, 1Flat, TTV1,140µs, Empak cstSEMI Prime, 1Flat, TTV1,500µs, Empak cstSEMI Prime, 1Flat, TTV1,600µs, Empak cstSEMI Prime, 1Flat, TTV3,000µs, Empak cstSEMI Prime, 1Flat, Wet Thermal Oxide 5µm ±5% thick over polished & etched sides, LPCVD Low Stress Silicon Nitride 350nm ±5% thick over Oxide on both sides, Empak cstSEMI Prime, 1Flat, with Front-Side LaserMark, MCC Lifetime>1,000µs, Empak cstSEMI Prime, 1Flat, with Front-Side LaserMark,TTV<1µm,, Empak cstSEMI Prime, 1Flat, with LaserMark, Empak cstSEMI Prime, 1Flat,2 extra scratched wafers at no extra charge,hard cstSEMI Prime, 1Flat,Back-side Fine Ground, MCC Lifetime>1,000µs, in EmpakSEMI Prime, 1Flat,Back-side has a non-Prime polish, Empak cstSEMI Prime, 1Flat,Back-side slightly darker than normal, in hard cstSEMI Prime, 1Flat,Both sides with 2µm SiO2, both sides with 250nm low stress silicon nitride over the oxide, Empak cstSEMI Prime, 1Flat,Front side Lasermark, MCC Lifetime>8,025µs, Empak cstSEMI Prime, 1Flat,in Empak cassettes of 3, 3 & 4 wafersSEMI Prime, 1Flat,LaserMark, TTV<2µm, Bow<10µm,Empak cstSEMI Prime, 1Flat,MCC Lifetime >10,000µs,with LaserMark, Empak cstSEMI Prime, 1Flat,MCC Lifetime>12,000µs,Empak cstSEMI Prime, 1Flat,MCC Lifetime>8,025µs,Empak cstSEMI Prime, 1Flat,Measured 120±5µm thick,Empak cstSEMI Prime, 1Flat,Measured thickness 2,150±7µm, TTV<5µm,Can be sold individuallySEMI Prime, 1Flat,TTV<1.5µm, Bow<8µm,LaserMark & Thickness, TTV, Bow data recorded for each wafer, hard cstSEMI Prime, 1Flat,TTV<1µm, Bow/Warp<15µm, Empak cstSEMI Prime, 1Flat,TTV<1µm, Bow<5µm, Warp<10µm, Measurements and thickness maps for each wafers, Empak cstSEMI Prime, 1Flat,TTV<1µm, Empak cstSEMI Prime, 1Flat,TTV<1µm,Empak cstSEMI Prime, 1Flat,TTV<2µm, Bow<10µm, Warp<20µm, Empak cstSEMI Prime, 1Flat,TTV<2µm, Bow<12µm,LaserMark & Thickness, TTV, Bow data recorded for each wafer, hard cstSEMI Prime, 1Flat,TTV<2µm,Empak cstSEMI Prime, 1Flat,TTV<3µm, Bow/Warp<3µm,hard cstSEMI Prime, 1Flat,TTV<3µm, Empak cstSEMI Prime, 1Flat,TTV<3µm,, with LaserMark, Empak cstSEMI Prime, 1Flat,TTV<3µm,Empak cstSEMI Prime, 1Flat,TTV<3µm,LaserMark, Empak cstSEMI Prime, 1Flat,TTV<4µm,hard cstSEMI Prime, 1Flat,TTV1,000µs, Empak cstSEMI Prime, 1Flat,TTV500µs, Empak cstSEMI Prime, 1Flat,TTV800µs, Empak cstSEMI Prime, 1Flat(57.5mm),TTV<5µm, TIR<1µm, Bow<10µm, Warp<20µm,Empak cstSEMI Prime, 2 Flats at [111], SF 30° CW from PF, Empak cstSEMI Prime, 2 Flats,Ultra flat TTV<0.25µm, Bow<1µm, Warp<6µm, Wafer with LaserMark and meaurements, Scratched, can be repolished for additional fee, Empak cstSEMI Prime, 2F, TTV<5µm, Empak cstSEMI Prime, 2Flats (PF @ [111], SF @ [111] CW 70.5° from PF), in hard cassettes of 1, 2 & 2 wafersSEMI Prime, 2Flats (PF at [111]±0.5°, SF at [111] CW 70.5° from PF), MCC Lifetime>1,000µs, hard cstSEMI Prime, 2Flats (PF at [111]±0.5°, SF at [111] CW 70.5° from PF), MCC Lifetime>1,000µs, in hard cassettes of 7, 8, 8 wafersSEMI Prime, 2Flats (PF at ±0.2°, SF at CW 109.5° from PF), Empak cstSEMI Prime, 2Flats (PF at ±0.2°, SF at CW 109.5° from PF),TTV<3µm, Bow<15m, Warp<30µm,EmpaSEMI Prime, 2Flats (PF at ±0.5°, SF at 109.5° CW from PF),Ultra-Low TTV<1µm, Empak cstSEMI Prime, 2Flats {PF @ ±0.25°; SF @ CW 70.5° from PF}, MCC Lifetime>1,000µs, Empak cstSEMI Prime, 2Flats {PF at , SF 180° from PF}, Empak cstSEMI Prime, 2Flats {PF at , SF at CW 70.5° from PF}, Empak cstSEMI Prime, 2Flats {PF at [111], SF at [111] CW 70.5° from PF}, Empak cstSEMI Prime, 2Flats {PF at ±0.5°, SF at CW 109.5° from PF}, TTV<5µm, Empak cstSEMI Prime, 2Flats {PF(57mm) at ±1°, SF(37mm) at CW 70.5° from PF}, Empak cstSEMI Prime, 2Flats {SF 180° from PF}, TTV<4µm, Bow<8µm, Warp<16µm, Empak cstSEMI Prime, 2Flats, Back side LaserMark per SEMI M12, TTV<5µm, Empak cstSEMI Prime, 2Flats, Both-sides-polished with LPCVD Si3N4 200±10nm thick on both sides, hard cstSEMI Prime, 2Flats, EmpakSEMI Prime, 2Flats, Empak cstSEMI Prime, 2Flats, Empak cst, MCC Lifetime>1,000µsSEMI Prime, 2Flats, Empak cst, TTV<1µmSEMI Prime, 2Flats, Groups of 5 wafersSEMI Prime, 2Flats, hard cstSEMI Prime, 2Flats, Individual cstSEMI Prime, 2Flats, Individual cst (Sold in Packs of 5 wafers)SEMI Prime, 2Flats, Individual cst in Groups of 10 wafersSEMI Prime, 2Flats, Individual cst, Group of 3 wafersSEMI Prime, 2Flats, Individual cst, Groups of 5 wafersSEMI Prime, 2Flats, Individual cst, Sold as Group of 9 wafersSEMI Prime, 2Flats, Individual cst, Sold in groups of 5 wafersSEMI Prime, 2Flats, Individual cst, Sold in packs of 2 wafersSEMI Prime, 2Flats, MCC Lifetime>1,000µs, Empak cstSEMI Prime, 2Flats, MCC Lifetime>1,000µs, hard cstSEMI Prime, 2Flats, MCC Lifetime>1,200µs, Empak cstSEMI Prime, 2Flats, MCC Lifetime>3,400µs, Empak cstSEMI Prime, 2Flats, MCC Lifetime>370µs, Empak cstSEMI Prime, 2Flats, SF 180° from PF (not 45° CW from PF), hard cstSEMI Prime, 2Flats, TTV<5µm, Bow/Warp<10µm, Empak cstSEMI Prime, 2Flats, TTV<5µm, Bow<15µm, Empak cstSEMI Prime, 2Flats, TTV<5µm, Empak cstSEMI Prime, 2Flats, TTV<5µm, hard cstSEMI Prime, 2Flats, TTV<5µm, MCC Lifetime=~1,390µs, Empak cstSEMI Prime, 2Flats, TTV<5µm, MCC Lifetime=~1,390µs, in Empak cstSEMI Prime, 2Flats, TTV<5µm,DRY Thermal Oxide 20±2nm thick on both sides,Empak cstSEMI Prime, 2Flats, TTV<5µm,Free of Striations,Empak cstSEMI Prime, 2Flats, TTV<6µm, Bow/Warp<10µm, hard cstSEMI Prime, 2Flats, TTV<7µm, Bow/Warp<20µm, Empak cstSEMI Prime, 2Flats, TTV<7µm, Empak cstSEMI Prime, 2Flats, TTV<7µm,Free of Striatons,Empak cstSEMI Prime, 2Flats, TTV<8µm, Empak cstSEMI Prime, 2Flats, TTV1,000µs, Empak cstSEMI Prime, 2Flats, TTV1,300µs, Empak cstSEMI Prime, 2Flats, TTV10,000µs,Empak cstSEMI Prime, 2Flats, TTV200µs, Empak cstSEMI Prime, 2Flats, with LaserMark, Empak cstSEMI Prime, 2Flats,Back-side Sand-blasted with LTO seal,in Empak cassettes (7 + 7 wafers)SEMI Prime, 2Flats,Both sides polished with LPCVD Si3N4 5,000±250µ thick, Empak cstSEMI Prime, 2Flats,Bow<5µm,Empak cstSEMI Prime, 2Flats,Bow<5µm,hard cstSEMI Prime, 2Flats,DRY Thermal Oxide 50±5nm thick on both sides,Empak cstSEMI Prime, 2Flats,Free of Striations,Individual cst sealed in a group of 2 wafersSEMI Prime, 2Flats,Free of Striations,Individual cst sealed in a group of 5 wafersSEMI Prime, 2Flats,MCC Lifetime>14,581µs,TTV<5µm, Empak cstSEMI Prime, 2Flats,MCC Lifetime>3,400µs,Empak cstSEMI Prime, 2Flats,Some with striation marks, Empak cstSEMI Prime, 2Flats,TTV<1.5µm,Empak cstSEMI Prime, 2Flats,TTV<10µm,With Back-Side LaserMark, Empak cstSEMI Prime, 2Flats,TTV<15µm, Individual cstSEMI Prime, 2Flats,TTV<1µm, Empak cstSEMI Prime, 2Flats,TTV<1µm,Empak cstSEMI Prime, 2Flats,TTV<1µm,Front LaserMark, Empak cstSEMI Prime, 2Flats,TTV<1µm,Front-Side LaserMark, Empak cstSEMI Prime, 2Flats,TTV<1µm,with LaserMark, Empak cstSEMI Prime, 2Flats,TTV<2µm, Empak cstSEMI Prime, 2Flats,TTV<2µm, Free of Striations,Empak cstSEMI Prime, 2Flats,TTV<2µm,Empak cstSEMI Prime, 2Flats,TTV<2µm,with LaserMark, Empak cstSEMI Prime, 2Flats,TTV<3µm, Empak cstSEMI Prime, 2Flats,TTV<3µm,Bow/Wrp<25µm, LaserMark, Empak cstSEMI Prime, 2Flats,TTV<3µm,Empak cstSEMI Prime, 2Flats,TTV<5µm, Bow<10µm, Warp<30µm,Empak cstSEMI Prime, 2Flats,TTV<5µm,Empak cstSEMI Prime, 2Flats,TTV1,000µs, Empak cstSEMI Prime, 2Flats,Ultra flat TTV<0.3µm, Empak cstSEMI Prime, 2Flats,with 150nm of LPCVD Stoichiometric Silicon Nitride on both sides, Empak cstSEMI Prime, 2Flats,with Thin film of Iron (Fe), 25±15nm thick on polished side, Empak cstSEMI Prime, Empak cstSEMI Prime, hard cstSEMI Prime, JEIDA Flat (47.5mm) at , Empak cstSEMI Prime, JEIDA Flat (47.5mm), LaserMark, TTV maps,TTV<10µm,Empak cstSEMI Prime, JEIDA Flat (47.5mm),TTV1,000µs, Empak cstSEMI Prime, JEIDA Flat 47.5mm,Back-side LTO (0.3-0.4)µm thick, TTV<6µm, Emapk csts of 2 + 4 wafersSEMI Prime, Notch, Backside LaserMark,TTV<3µm, Bow/Warp<40µm, Empak cstSEMI Prime, Notch, Empak cstSEMI Prime, Notch, LaserMark, TTV<6µm, Bow<15µm, Warp1,000µs, Empak cstSEMI Prime, Notch, MCC Lifetime>1,000µs, Empak cstSEMI Prime, Notch, TTV<5µm, Bow<15µm, Warp<30µm,Surface Metals<5E10 a/cm²,Empak cstSEMI Prime, Notch, TTV<5µm, Bow<20µm, Warp<40µm, Empak cstSEMI Prime, One Flat, Empak cstSEMI Prime, SEMI Flat (one) @ [1,-1,0],in Empak cassettes of 7 wafersSEMI Prime, TTV<5µm, Empak cstSEMI Prime, TTV<7µm {1,000µs, Empak cstSEMI Prime, TTV1,000µs, Empak cstSEMI Prime,1Flat at [001],MCC Lifetime>1,000µs, Empak cstSEMI Prime,2Flats (SF 90° CCW from PF), TTV<2.54µm,hard cstSEMI Prime,Backside ACID Etched, Empak cstSEMI Prime,NO Flats, Empak cstSEMI Prime,NO Flats, Super Flat, TTV<1µm,Empak cstSEMI Prime,NO Flats, TTV<1µm, Bow<2.5µm, Warp<4µm,hard cst,SEMI Prime,NO Flats, TTV<1µm,Empak cstSEMI Prime,NO Flats,Individual csts, Sealed in Pack of 5 wafersSEMI Prime,Notch on {not on },Laser Mark, Empak cstSEMI Prime,Notch, Empak cstSEMI Prime,Notch, TTV<2µm, Empak cstSEMI Prime,Notch,MCC Lifetime>1,400µs, Empak cstSEMI Prime,TTV<1µm,Empak cstSEMI Prime,TTV<2µm,Empak cstSEMI Prime(Light scratches),1Flat, MCC Lifetime>1,000µs, Empak cstSEMI PrimeNO Flats, with LaserMark, Empak cstSEMI PrimeNotch, Laser Mark on front side, Empak cstSEMI Primewith Notch, TTV<1µm, Bow/Warp<10µm,Empak cstSEMI TEST (Chipped), 1Flat, MCC Lifetime>1,200µs, Individual cst as Group of 2 wafersSEMI TEST (Front Side Perfect, Back Side Scratched),NO Flats, Super Flat, TTV<1µm,Empak cst,SEMI Test, 2Flats, Individual cst, Groups of 2 wafers, With Edge ChipsSEMI, 1Flat (47.5mm),TTV<4µm, Surface Chips, Empak cstSEMI, 1Flat (57.5mm) at ±0.5°, Empak cstSEMI, 1Flat (57.5mm), Empak cstSEMI, 1Flat (57.5mm), Individual cst, Sold in groups of 1 waferSEMI, 1Flat (57.5mm), TTV<5µm, Bow/Warp<15µm, with LaserMark, Empak cstSEMI, 1Flat, coin rollSEMI, 1Flat, Empak cstSEMI, 1Flat, Individual cst, Sold in Packs of 10 & 3 wafersSEMI, 1Flat, MCC Lifetime>1,000µs, hard cstSEMI, 1Flat, MCC Lifetime>1,000µs,TTV<1µm,hard cstSEMI, 1Flat, MCC Lifetime>1,500µs, Empak cstSEMI, 1Flat, TTV<30µm, Bow/Warp<40µm, Individual cstSEMI, 1Flat,Bright-Etched, MCC Lifetime>200µs,Empak cstSEMI, 1Flat,MCC Lifetime=7,562µs,in Unsealed Empak cstSEMI, 1Flat,TTV14,581µs,Empak cstSEMI, 1Flat,TTV2,000µs, Empak cstSEMI, 1Flat,Wafers can be polished for additional fee, Empak cstSEMI, 2Flats, coin rollSEMI, 2Flats, Empak cstSEMI, 2Flats, Individual cstSEMI, 2Flats, TTV<5µm, in Coin RollSEMI, 2Flats,TTV<1µm,Empak cstSEMI, 2Flats(SF at 90°{not at 180°}), MCC Lifetime>980µs, Empak cstSEMI, TTV<8µm, Empak cstSEMI,1Flat at {not at }, Empak cstSEMI,NO Flats, MCC Lifetime>1,000µs, in unsealed hard cassetteSEMI,NO Flats, MCC Lifetime>1,000µs, No Edge Rounding (minor edge-chips), Individual cstSEMI,NO Flats, MCC Lifetime>3,460µs, Individual cst, Can be sold individuallySEMI,NO Flats, Packed in a jarSEMI,Notch,Empak cstSEMI,TEST (Edge Chips), NO Flats,in individual cassettes (Sold in Packs of 2 wafers)SEMITEST - needs cleaning, MCC Lifetime>3,400µs, 1Flat, Unsealed Empak cstSEMITEST (2 wafers with Chips, 1 wafer Scratched),2Flats, sold in pack of 3 wafersSEMITEST (Bad Lasermark on back). To use with a chuck, light polish needed on back-side, 1Flat, Empak cstSEMITEST (Defective, scratched, high TTV),2Flats, in Unsealed Empak cstSEMITEST (Dirty, scratched), 1Flat (57.5mm), Empak cstSEMITEST (haze on edges), 1Flat (57.5mm), Empak cstSEMITEST (Haze, scratches, TTV<15µm),PF at [111]±0.5°, SF at [111] CW 70.5°±5° from PF, Empak cstSEMITEST (light scratches), 1Flat, Empak cstSEMITEST (Scratched but can be repolished), Empak cstSEMITEST (scratched, surface marks), NO Flats, MCC Lifetime>1,000µs, Unsealed Individual cstSEMITEST (scratched), 1Flat (57.5mm), in Unsealed Empak cstSEMITEST (scratched), 1Flat (57.5mm), MCC Lifetime>1,000µs, in Unsealed Empak cstSEMITEST (Scratched), 1Flat, Individual cstSEMITEST (Scratched),1Flat, Soft cstSEMITEST (Scratched),2Flats, in Unsealed Individual cstSEMITEST (scratches on back-side), 1Flat, Empak cstSEMITEST (Scratches on both sides), 1Flat, Empak cstSEMITEST (scratches, in unsealed cst), 2Flats, Lasermark, Empak cstSEMITEST (Scratches), ~100 small holes through wafer in pattern, 1Flat, TTV<8µm, Empak cstSEMITEST (scratches), 1Flat, in Unsealed Empak cstSEMITEST (Scratches), 1Flat, in Unsealed Empak cst, MCC Lifetime>1,200µsSEMITEST (small scratches on front side), 1Flat, Individual cassettes, Sold in Packs of 8 wafersSEMITEST (Spotted defect) - wafers with three layers of SiO2 and Ge deposited by Electron Beam Evaporation,2Flats, Empak cstSEMITEST (TTV<25µm), Notch, Bow/Warp<50µm, Empak cstSEMITEST (unpolished side has stain), 1Flat, Empak cstSEMITEST (unsealed), 1 Flat, Empak cstSEMITEST {Polishing Defects}, NO Flats, in Unsealed Individual cstSEMITEST, 1Flat (57.5mm), Clean, sealed, scratchedSEMITEST, 1Flat, Empak cstSEMITEST, 2Flats, Empak cstSEMITEST, 2Flats, Individual cst, Groups of 10 wafersSEMITEST, 2Flats, Individual cst, Groups of 5 wafersSEMITEST, NO Flats, coin rollSet of 4 Lappped wafer Resistivity Standards, (0.007, 0.015, 0.035, 0.127)Ohmcm,in Individual cstSilicon cubes, one-side SEMI Prime polished,Ra<3µ rms, hard cstSilicon Frames: 25.6mm square with 22mm square removed from center (drawing available on request)Silicon Frames:44mm square with 40mm square removed from center (drawing available on request)Single Crystal Silicon Rod, 9.9mmØ × 27.9±0.1mm,NO FlatsSuperflat central 1"Ø, SEMI, 1Flat, MCC Lifetime>1,000µs, TTV<1µm, hard cstTESTTEST - Large back-side scratch, NO Flats, MCC Lifetime>1,500µs, Individual cstTEST (Scratched), NO Flats, Empak cstTEST (Scratched),2Flats, in unsealed Empak cstWith layer of Al2O3, ~0.1µm or ~0.05µm thick, Wafers with a matrix of Polycrystalline Silicon dots, Empak cst,[More Info]Zero Diffraction Plate, NO Flats, Individual cst, Sold in packs of 6 and 3 wafersZero X-Ray Diffraction plate, with central sample pocket 5mmØ×200µm, NO Flats, Individual cstGrowth Method:All-100CZePakFZLid/Base/SpringVGFMaterial:AllClean RoomGallium ArsenideGermaniumIndium PhosphideSapphireSiliconOrientations:All(1-102)?2?(100.00)(100)(100) -15(100)-4(100)-6(100)-9(110.00)(110)(111.00)(111)(111) Off 2"(111) Off 4">1 E7>30AnyIntrinsic Si:-Lid/Base/Springn-type Si:Asn-type Si:Pn-type Si:Sbp-type Si:Bp-typeSi:GaResistivity:All.001-.005.005-.02.005,02.01-.04> 15000> 20000>0.1>0.5>1>10>100>1E7>20>30>3000>30010.0007-0.00130.001-0.0020.001-0.0030.001-0.0050.001-0.005 {0.0036-0.0041}0.001-0.0070.001-0.0100.001-0.0300.001-0.2000.001-1.0000.0012-0.00150.002-0.005 {0.0037-0.0039}0.0023-0.00260.005-0.0080.005-0.0160.005-0.0200.005-0.020 {0.010-0.020}0.005-0.0300.008-0.0220.009-0.0110.01-0.01-0.020.01-0.02 {0.012-0.018}0.01-0.02 {0.0139-0.0144}0.01-0.02 {0.0149-0.0156}0.01-0.050.01-0.100.010-0.022 {0.010-0.020}0.010-0.0230.013-0.0200.014-0.0210.015-0.0200.020.02-1.000.024-0.0360.025-0.0350.027-0.0330.05-0.150.05-0.200.05-0.500.1-0.20.1-0.50.1-1.5 {0.52-0.63}0.1-35.00.10-0.250.15-5.000.20-1.460.224-0.2600.3-0.4 {0.33-0.36}0.3-0.50.5-0.60.5-1.00.5-10.00.5-2.00.50-0.650.7-1.30.80-0.990.80-1.051-101-1001-100 {10-13}1-151-201-20 {1-5}1-20 {1.25-2.50}1-20 {1.5-8.4}1-251-31-301-351-51-5 {1.06-1.84}1-5 {2.1-4.3}1-501-50 {10-23}1-91.25-2.501.48-1.7010-1210-1510-2010-20 {11.5-17.0}10-2410-2510-3010-351000-1000011-1515-2515-35150-20016-242-102-82.5-3.52.7-4.020-4520-5020-802000-25-3025-3525-402k-5k3-103-730-6030-60 {33-41}30-80300-350 pm35-85350-400 pm4-104-64-74e185-105-10 {5.9-9.1}5-205-255-25 {9-24}5-305-355-35 {25-30}5-405-6500-600 pm50000006-106-126-8 {6.1-7.9}7-148-108-129-11 {9.5-10.7}AnyFZ NTD300-800 {517-529}FZ NTD500-550FZ>1,000FZ>1,500FZ>10,000FZ>10,000 {11,000-34,000}FZ>10,000 {11,400-19,930}FZ>10,000 {19,410-32,973}FZ>10,000 {22,000-26,000}FZ>100FZ>15,000FZ>17,500FZ>18,000FZ>2,000FZ>2,500FZ>2,700FZ>20,000FZ>20,000 {20,630-90,500}FZ>20,000 {21,329-200,000}FZ>20,000 {21,730-295,100}FZ>20,000 {22,000-26,000}FZ>20,000 {22,000-41,000}FZ>20,000 {24,940-308,900}FZ>200FZ>25,000 {28,000-53,000}FZ>3,000FZ>3,500FZ>4,400FZ>5,000FZ>50FZ>50,000 {>167,000}FZ>500FZ>6,000FZ>65,000FZ>7,000FZ>70,000FZ>8,000FZ>8,000 {8,800-12,300}FZ>9,000FZ>9,500FZ0.008-0.015FZ0.011-0.013FZ0.17-0.23FZ0.25-0.75FZ0.5-1.0FZ0.5-1.0 {0.56-0.60}FZ0.5-10.0FZ1-10FZ1-10 {1.02-1.08}FZ1-2 {1.7-1.8}FZ1-20FZ1-3FZ1-30FZ1-30 {1.379-1.382}FZ1-5FZ1-5 {2.5-3.0}FZ1.5-2.5FZ10-11FZ10-12 {10.2-10.4}FZ10,000-15,000FZ10.263-10.398FZ100-200FZ100-500FZ130-350FZ15,000-20,000FZ150-200FZ160-175 {163-174}FZ163-174FZ182-196FZ198-200FZ2,000-3,000FZ2,000-4,000FZ2,000-5,000FZ2,000-6,000FZ2,000-6,500FZ2,652-2,743FZ2,700-3,300FZ2,879-3,258FZ2.0-2.5FZ20-100FZ20-70FZ20,000-30,000FZ20,000-40,000FZ20,000-70,000FZ200-400FZ240-280FZ25-75FZ3-4 {3.0-3.3}FZ3,000-5,000FZ3,100-6,800FZ3.0-3.2FZ300-400FZ340-400FZ4,000-8,000FZ4.6-4.8FZ40-140FZ40-90FZ429-454FZ429.4-453.7FZ430-550FZ45-52FZ5,000-10,000FZ5,000-13,000FZ5,000-20,000 {10,000-20,000}FZ5,000-7,400FZ50-100FZ50-70FZ50-70 {57-62}FZ6.03-7.37FZ600-900FZ7,000-10,000FZ7,000-14,300FZ7,000-18,000FZ7,000-20,000FZ7,000-8,000 {7,025-7,856}FZ730-1,050FZ8-12FZ8-13FZ8.8-11.2FZ80-120FZ800-1,000FZ800-1,500FZ850-900FZ90-120Holds1WaferHolds25WafersHoldsl WaferMCZ0.01-0.02 {0.013-0.017}N/AOct-35Surface:All1,0001,000 ±101,000 ±501,010 ±151,0161,0201,075 ±501,2001,3001,3501,3651,4001,4501,4651,5001,500 ±151,500 ±501,5251,5501,6001,600 ±1001,6501,8751,910 ±101,9501,9751,975 ±5010,000 ±10010,000 ±5010,10010,225 ±25 ?m100 ±10100 ±1512,700 ±50120 ±20150150 ±15153 ±4165165 ±10170 ±1175175 ±10178 ±8180185190190 ±101952,0002,000 ±1002,000 ±502,1502,2002,3002,600 ±502,9502,950 ±502,975 ±5020,000 ±100200200 ±10200 ±15203215215 ±35225225 ±15225 ±5228235235 ±35240240 ±1025,000 ±50250250 ±10260265 ±1027,870 ±100275275 ±5279280285285 ±3292.5±2.53,0003,000 ±1003,000 ±503,050 ±503,093 ±503,1003,100 ±503,250 ±1003,870 ±50300300 ±10300 ±15300 ±5302 ±3303 ±2.5305315315 ±15318 ±7320320 ±10325330330 ±10331331 ±1335340341 ±1350350 ±10350 ±5350 ±50356360365370375380380 ±10380 ±15381390 ±103974,0004,975400400 ±10400 ±15415 ±15425440445 ±154504574584604654704754804905,0005,000 ±1005,000 ±2005,000 ±5050 ±5500500 ±10500 ±15500 ±5508508 ±15525525 ±10525 ±355505755906,0006,000 ±506,3506,350 ±100600605610615615 ±10620620 ±1625625 ±10625 ±15625 ±5630635640640 ±10650650 ±5675675 ±10675 ±15675 ±57,620 ±100700700 ±50710 ±15720725725 ±50737 ±12750750 ±50762762 ±12765775775 ±10780790 ±10795 ±10800800 ±10825850875875 ±10880889 ±13890 ±15900915 ±10950950 ±50975985EPIN/AP/EP/E/DTOxP/E/NiP/E/WTOxP/PPIPThickness:All0.39"0.5"1"10-30µm10.0 ±0.2µm100-200µm100.6 ±0.1µm1000-1050µm101µm11300-11500µm11900-12100µm12"140-160µm150-200µm175-225µm180-200µm1975-2025µm2"20.0±0.2×15.0±0.2200-250µm200-500µm2000-5000µm225-275µm2400-2600µm25.6x25.6µm25.6µm×25.6µm250-300µm250-500µm275-325µm2900-3100µm3"300-350µm325-375µm32µm330-430µm350-400µm350-600µm375-425µm4"40-60µm400-450µm4000-6000µm40µm44×44µm450-500µm475-525µm48.254800-5200µm4900-5100µm5"500-550µm500-600µm550-650µm575-625µm5900-6100µm5950-6050µm6"600-650µm610-660µm650-700µm75.2µm8"80-100µm800-1000µm825-875µm850-1000µm875-925µm950-1000µm950-1050µm99.25µm9900-10100µmHolds1WaferN/AP/EP/PPIEType:AllAnyBROKENC/CE/EFeP/EG/GIntrinsicL/LNOP/EONNP/PNOxP/EOxOxP/POxPP/EP/EOxP/GP/PPlyAP/ER-AxisRoundShipping CassetteSiSingle Wafer ShipperSiNOxP/EOxSiNUndoped Search Reset SKU # In Stock CIF Price Each Material Diameter Type Dopant Growth Method Orientation Resistivity Thickness Surface Grade Delivery Time Add to Cart 1915 10000 $100 Gallium Arsenide 50.8mm P Si VGF (100) -15 4e18 250-300µm P/E EP! 15-30 days -+ 3509 10000 $250 Gallium Arsenide 150mm Si Undoped VGF (100) >1E7 610-660µm P/P EPI 15-30 days -+ 5186 10000 $250 Gallium Arsenide 150mm Si Undoped VGF (100) >1E7 500-600µm P/P TEST 15-30 days -+ 5187 10000 $250 Gallium Arsenide 150mm Si Undoped VGF (100) >1E7 500-600µm P/P TEST 15-30 days -+ 5180 10000 $250 Gallium Arsenide 100mm Si Undoped VGF (100) >1E7 500-600µm P/P TEST 15-30 days -+ 5181 10000 $250 Gallium Arsenide 100mm Si Undoped VGF (100) >1E7 500-600µm P/P TEST 15-30 days -+ 5183 10000 $250 Gallium Arsenide 150mm Undoped VGF -100 >1 E7 500-600 pm P/P N/A TEST 15-30 days -+ 5178 10000 $50 Gallium Arsenide 100mm Single Wafer Shipper ePak N/A N/A Holds1Wafer N/A N/A PRIME 15-30 days -+ SKU 1915 QTY 10000 CIF Price $100 per Unit Material Gallium Arsenide Diameter 50.8mm Type P Dopant Si Growth Method VGF Orientations (100) -15 Resistivity 4e18 Thickness 250-300µm Surface P/E Grade EP! Delivery Time 15-30 days -+ Add to Cart SKU 3509 QTY 10000 CIF Price $250 per Unit Material Gallium Arsenide Diameter 150mm Type Si Dopant Undoped Growth Method VGF Orientations (100) Resistivity >1E7 Thickness 610-660µm Surface P/P Grade EPI Delivery Time 15-30 days -+ Add to Cart SKU 5186 QTY 10000 CIF Price $250 per Unit Material Gallium Arsenide Diameter 150mm Type Si Dopant Undoped Growth Method VGF Orientations (100) Resistivity >1E7 Thickness 500-600µm Surface P/P Grade TEST Delivery Time 15-30 days -+ Add to Cart SKU 5187 QTY 10000 CIF Price $250 per Unit Material Gallium Arsenide Diameter 150mm Type Si Dopant Undoped Growth Method VGF Orientations (100) Resistivity >1E7 Thickness 500-600µm Surface P/P Grade TEST Delivery Time 15-30 days -+ Add to Cart SKU 5180 QTY 10000 CIF Price $250 per Unit Material Gallium Arsenide Diameter 100mm Type Si Dopant Undoped Growth Method VGF Orientations (100) Resistivity >1E7 Thickness 500-600µm Surface P/P Grade TEST Delivery Time 15-30 days -+ Add to Cart SKU 5181 QTY 10000 CIF Price $250 per Unit Material Gallium Arsenide Diameter 100mm Type Si Dopant Undoped Growth Method VGF Orientations (100) Resistivity >1E7 Thickness 500-600µm Surface P/P Grade TEST Delivery Time 15-30 days -+ Add to Cart SKU 5183 QTY 10000 CIF Price $250 per Unit Material Gallium Arsenide Diameter 150mm Type Undoped Dopant VGF Growth Method -100 Orientations >1 E7 Resistivity 500-600 pm Thickness P/P Surface N/A Grade TEST Delivery Time 15-30 days -+ Add to Cart SKU 5178 QTY 10000 CIF Price $50 per Unit Material Gallium Arsenide Diameter 100mm Type Single Wafer Shipper Dopant ePak Growth Method N/A Orientations N/A Resistivity Holds1Wafer Thickness N/A Surface N/A Grade PRIME Delivery Time 15-30 days -+ Add to Cart Our Blogs Industry Insights Stay informed with the latest trends, innovations, and expert articles in semiconductor wafer technology. 14 Nov Sustainable Practices in Wafer Manufacturing Eco-friendly materials, energy efficiency, and waste reduction for high-performance wafers. Continue reading 14 Nov How Wafer Quality Impacts Performance Learn why high-quality wafers are crucial for semiconductor performance and reliability Continue reading 13 Nov The Future of Semiconductor Wafers Discover emerging trends in semiconductor wafer technology and how they’re shaping the future. Continue reading
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