× |
|
Materials
-
Material:
Silicon
-
Diameter:
[771] ±0.3°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
Intrinsic Si:-
-
Resistivity:
FZ>1,000
-
Thickness:
4"
-
Surface:
300 ±15
-
Grade:
SEMI Prime, 1Flat at , TTV1,600µs, Empak cst
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
× |
|
Materials
-
Material:
Indium Phosphide
-
Diameter:
100mm
-
Type:
Si
-
Dopant:
Fe
-
Growth Method:
VGF
-
Orientations:
(100)
-
Resistivity:
5000000
-
Thickness:
600-650µm
-
Surface:
P/E
-
Grade:
PRIME
-
Delivery Time:
15-30 days
|
$250.00 |
|
$250.00 |
|