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× Placeholder Materials
  • Material:

    Silicon
  • Diameter:

    [100]
  • Type:

    P/E
  • Dopant:

    Boron
  • Growth Method:

    CZ
  • Orientations:

    p-type Si:B
  • Resistivity:

    1-30
  • Thickness:

    4"
  • Surface:

    2,950
  • Grade:

    SEMI, 2Flats, Individual cst
  • Delivery Time:

    15-30 days
$80.00
$80.00
× Placeholder Materials
  • Material:

    Silicon
  • Diameter:

    [100] ±1°
  • Type:

    P/E
  • Dopant:

    Boron
  • Growth Method:

    CZ
  • Orientations:

    n-type Si:As
  • Resistivity:

    8-12
  • Thickness:

    6"
  • Surface:

    380
  • Grade:

    SEMI Prime, 1Flat (57.5mm), Empak cst
  • Delivery Time:

    15-30 days
$110.00
$110.00
× Placeholder Materials
  • Material:

    Silicon
  • Diameter:

    [100]
  • Type:

    C/C
  • Dopant:

    Boron
  • Growth Method:

    CZ
  • Orientations:

    Intrinsic Si:-
  • Resistivity:

    FZ>20,000
  • Thickness:

    6"
  • Surface:

    3,250 ±100
  • Grade:

    SEMI,NO Flats, MCC Lifetime>1,000µs, No Edge Rounding (minor edge-chips), Individual cst
  • Delivery Time:

    15-30 days
$200.00
$200.00
× Placeholder Materials
  • Material:

    Silicon
  • Diameter:

    [100] ±0.3°
  • Type:

    P/P
  • Dopant:

    Boron
  • Growth Method:

    CZ
  • Orientations:

    Intrinsic Si:-
  • Resistivity:

    FZ>20,000
  • Thickness:

    4"
  • Surface:

    4,000
  • Grade:

    SEMI Prime, 1Flat, MCC Lifetime>2,000µs, Individual cst in Group of 5 wafers
  • Delivery Time:

    15-30 days
$200.00
$200.00
× Placeholder Materials
  • Material:

    Silicon
  • Diameter:

    [100]
  • Type:

    P/P
  • Dopant:

    Boron
  • Growth Method:

    CZ
  • Orientations:

    Intrinsic Si:-
  • Resistivity:

    FZ>20,000
  • Thickness:

    2"
  • Surface:

    500
  • Grade:

    SEMI Prime, 1Flat, MCC Lifetime>1,000µs, hard cst
  • Delivery Time:

    15-30 days
$100.00
$100.00
× Placeholder Materials
  • Material:

    Silicon
  • Diameter:

    [17,10,10]
  • Type:

    P/P
  • Dopant:

    Boron
  • Growth Method:

    CZ
  • Orientations:

    p-type Si:B
  • Resistivity:

    3-7
  • Thickness:

    6"
  • Surface:

    700
  • Grade:

    SEMI Prime, Notch, Empak cst
  • Delivery Time:

    15-30 days
$200.00
$200.00
× Placeholder Materials
  • Material:

    Silicon
  • Diameter:

    [112-5°towards[11-1]] ±0.5°
  • Type:

    P/P
  • Dopant:

    Boron
  • Growth Method:

    CZ
  • Orientations:

    n-type Si:P
  • Resistivity:

    FZ>100
  • Thickness:

    4"
  • Surface:

    765
  • Grade:

    SEMI Prime, 1Flat,TTV<3µm, Empak cst
  • Delivery Time:

    15-30 days
$80.00
$80.00
× Placeholder Materials
  • Material:

    Silicon
  • Diameter:

    [100]
  • Type:

    P/E
  • Dopant:

    Boron
  • Growth Method:

    CZ
  • Orientations:

    p-type Si:B
  • Resistivity:

    1-30
  • Thickness:

    4"
  • Surface:

    3,000
  • Grade:

    SEMI Prime, 2Flats, Individual cst in Groups of 10 wafers
  • Delivery Time:

    15-30 days
$80.00
$80.00
× Placeholder Materials
  • Material:

    Silicon
  • Diameter:

    76.2mm
  • Type:

    P
  • Dopant:

    Phos
  • Growth Method:

    CZ
  • Orientations:

    (111)
  • Resistivity:

    1-100
  • Thickness:

    5900-6100µm
  • Surface:

    P/E
  • Grade:

    PRIME
  • Delivery Time:

    15-30 days
$100.00
$100.00

Cart totals

Subtotal $1,150.00
Shipping

Shipping to CA.

Tax $0.00
Total $1,150.00 USD
Proceed to checkout