× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
FZ40-90
-
Thickness:
6"
-
Surface:
650 ±5
-
Grade:
SEMI Prime, 1Flat (57.5mm),TTV<3µm, Empak cst
-
Delivery Time:
15-30 days
|
$150.00 |
|
$150.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[111] ±0.5°
-
Type:
OxP/EOx
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:As
-
Resistivity:
0.001-0.005
-
Thickness:
4"
-
Surface:
525
-
Grade:
SEMI Prime, 2Flats, TTV<5µm,DRY Thermal Oxide 20±2nm thick on both sides,Empak cst
-
Delivery Time:
15-30 days
|
$40.00 |
|
$40.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
100mm
-
Type:
P
-
Dopant:
Phos
-
Growth Method:
CZ
-
Orientations:
(100.00)
-
Resistivity:
1-20
-
Thickness:
450-500µm
-
Surface:
P/P
-
Grade:
PRIME
-
Delivery Time:
15-30 days
|
$100.00 |
|
$100.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
FZ1-3
-
Thickness:
4"
-
Surface:
215 ±35
-
Grade:
SEMI Prime, 1Flat, Empak cst
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
|