× |
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Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
5-35
-
Thickness:
6"
-
Surface:
700
-
Grade:
SEMI Prime, 1Flat(57.5mm),TTV<5µm, TIR<1µm, Bow<10µm, Warp<20µm,Empak cst
-
Delivery Time:
15-30 days
|
$150.00 |
|
$150.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100-9.7°towards[110]] ±0.5°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
0.02-1.00
-
Thickness:
4"
-
Surface:
525
-
Grade:
SEMI Prime, 2Flats, Empak cst
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
× |
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Materials
-
Material:
Silicon
-
Diameter:
100mm
-
Type:
P
-
Dopant:
Phos
-
Growth Method:
FZ
-
Orientations:
(111.00)
-
Resistivity:
> 20000
-
Thickness:
275-325µm
-
Surface:
P/P
-
Grade:
PRIME
-
Delivery Time:
15-30 days
|
$100.00 |
|
$100.00 |
|