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Materials
-
Material:
Silicon
-
Diameter:
[111] ±0.5°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
0.80-1.05
-
Thickness:
3"
-
Surface:
458
-
Grade:
SEMI Prime, 1Flat, Empak cst
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
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Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
1-30
-
Thickness:
4"
-
Surface:
3,000
-
Grade:
SEMITEST (2 wafers with Chips, 1 wafer Scratched),2Flats, sold in pack of 3 wafers
-
Delivery Time:
15-30 days
|
$40.00 |
|
$40.00 |
× |
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Materials
-
Material:
Indium Phosphide
-
Diameter:
76.2mm
-
Type:
P
-
Dopant:
Zn
-
Growth Method:
VGF
-
Orientations:
(100)
-
Thickness:
600-650µm
-
Surface:
P/E
-
Grade:
PRIME
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
|