× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
1-30
-
Thickness:
3"
-
Surface:
381
-
Grade:
SEMI Prime, 2Flats,TTV<1.5µm,Empak cst
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
1-100
-
Thickness:
3"
-
Surface:
5,000 ±50
-
Grade:
SEMI Prime, 1Flat, Individual cst, In Groups of 5 wafers
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
× |
|
Materials
-
Material:
Clean Room
-
Diameter:
125mm
-
Type:
Single Wafer Shipper
-
Dopant:
ePak
-
Growth Method:
Lid/Base/Spring
-
Resistivity:
Holds1Wafer
-
Thickness:
N/A
-
Surface:
N/A
-
Grade:
PRIME
-
Delivery Time:
15-30 days
|
$50.00 |
|
$50.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
76.2mm
-
Type:
P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
(100)
-
Resistivity:
1-20
-
Thickness:
500-550µm
-
Surface:
P/E
-
Grade:
PRIME
-
Delivery Time:
15-30 days
|
$50.00 |
|
$50.00 |
|