× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
FZ300-400
-
Thickness:
4"
-
Surface:
280
-
Grade:
SEMI Prime, 1Flat,MCC Lifetime>12,000µs,Empak cst
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
0.05-0.15
-
Thickness:
1"
-
Surface:
525
-
Grade:
SEMI Prime, 1Flat, Soft cst
-
Delivery Time:
15-30 days
|
$40.00 |
|
$40.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
25-40
-
Thickness:
2"
-
Surface:
5,000
-
Grade:
SEMI, 1Flat, Individual cst, Sold in Packs of 10 & 3 wafers
-
Delivery Time:
15-30 days
|
$100.00 |
|
$100.00 |
|