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Materials
-
Material:
Silicon
-
Diameter:
[510]
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Type:
P/P
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Dopant:
Boron
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Growth Method:
CZ
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Orientations:
p-type Si:B
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Resistivity:
FZ2,879-3,258
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Thickness:
2"
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Surface:
1,550
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Grade:
Zero Diffraction Plate, NO Flats, Individual cst, Sold in packs of 6 and 3 wafers
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Delivery Time:
15-30 days
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$100.00 |
|
$100.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[111] ±0.2°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
Intrinsic Si:-
-
Resistivity:
FZ>10,000
-
Thickness:
2"
-
Surface:
300 ±15
-
Grade:
SEMI Prime, 1Flat,2 extra scratched wafers at no extra charge,hard cst
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Delivery Time:
15-30 days
|
$100.00 |
|
$100.00 |
|