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Materials
-
Material:
Silicon
-
Diameter:
[111-3°] ±0.5°
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
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Resistivity:
>10
-
Thickness:
2"
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Surface:
600
-
Grade:
SEMI Prime, 1Flat,TTV<3µm, Bow/Warp<3µm,hard cst
-
Delivery Time:
15-30 days
|
$100.00 |
|
$100.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
1-100
-
Thickness:
40µm
-
Surface:
250
-
Grade:
SEMI Prime, 1Flat, Individual cst, in Pack of 5 wafers
-
Delivery Time:
15-30 days
|
$100.00 |
|
$100.00 |
|