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Materials
-
Material:
Silicon
-
Diameter:
[011] ±0.5°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
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Resistivity:
FZ NTD500-550
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Thickness:
2"
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Surface:
6,000 ±50
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Grade:
Prime, 1Flat, MCC Lifetime>1,000µs, Individual cst, Group of 2 wafers
-
Delivery Time:
15-30 days
|
$150.00 |
|
$150.00 |
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Materials
-
Material:
Silicon
-
Diameter:
[110] ±1°
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
FZ5,000-10,000
-
Thickness:
2"
-
Surface:
525
-
Grade:
SEMI Prime, 2Flats (PF at [111]±0.5°, SF at [111] CW 70.5° from PF), MCC Lifetime>1,000µs, hard cst
-
Delivery Time:
15-30 days
|
$100.00 |
|
$100.00 |
|