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Materials
-
Material:
Indium Phosphide
-
Diameter:
50.8mm
-
Type:
P
-
Dopant:
Si
-
Growth Method:
VGF
-
Orientations:
(100)
-
Thickness:
275-325µm
-
Surface:
P/E
-
Grade:
PRIME
-
Delivery Time:
15-30 days
|
$100.00 |
|
$100.00 |
× |
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Materials
-
Material:
Silicon
-
Diameter:
100mm
-
Type:
P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
(100)
-
Resistivity:
1-20
-
Thickness:
500-550µm
-
Surface:
P/E/WTOx
-
Grade:
PRIME
-
Delivery Time:
15-30 days
|
$40.00 |
|
$40.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[111] ±0.5°
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
FZ2,000-5,000
-
Thickness:
2"
-
Surface:
331
-
Grade:
SEMITEST (Scratched),1Flat, Soft cst
-
Delivery Time:
15-30 days
|
$100.00 |
|
$100.00 |
|