× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
FZ2,000-6,000
-
Thickness:
8"
-
Surface:
725
-
Grade:
SEMI Prime, Notch, LaserMark, TTV<6µm, Bow<15µm, Warp1,000µs, Empak cst
-
Delivery Time:
15-30 days
|
$150.00 |
|
$150.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
FZ>5,000
-
Thickness:
4"
-
Surface:
200 ±10
-
Grade:
SEMI Prime, 1Flat, MCC Lifetime>1,000µs, Empak cst
-
Delivery Time:
15-30 days
|
$150.00 |
|
$150.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
FZ>1,000
-
Thickness:
4"
-
Surface:
325
-
Grade:
SEMI Prime, 1Flat, Empak cst
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
PlyAP/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:As
-
Resistivity:
0.001-0.005
-
Thickness:
4"
-
Surface:
525
-
Grade:
With layer of Al2O3, ~0.1µm or ~0.05µm thick, Wafers with a matrix of Polycrystalline Silicon dots, Empak cst,[More Info]
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100] ±1°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
1-5
-
Thickness:
3"
-
Surface:
200
-
Grade:
SEMI Prime, 1Flat, TTV<5µm, Empak cst
-
Delivery Time:
15-30 days
|
$50.00 |
|
$50.00 |
|