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Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
C/C
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Dopant:
Boron
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Growth Method:
CZ
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Orientations:
Intrinsic Si:-
-
Resistivity:
FZ>10,000
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Thickness:
0.5"
-
Surface:
12,700 ±50
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Grade:
NO Flats, a set of 4 rods sealed in polyehtylene foil
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Delivery Time:
15-30 days
|
$90.00 |
|
$90.00 |
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Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
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Dopant:
Boron
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Growth Method:
CZ
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Orientations:
p-type Si:B
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Resistivity:
1-20
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Thickness:
3"
-
Surface:
2,000
-
Grade:
SEMITEST, 2Flats, Individual cst, Groups of 10 wafers
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Delivery Time:
15-30 days
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$50.00 |
|
$50.00 |
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