× |
|
Materials
-
Material:
Silicon
-
Diameter:
[110] ±0.5°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
1-10
-
Thickness:
3"
-
Surface:
360
-
Grade:
SEMI Prime, 2Flats (PF at ±0.5°, SF at 109.5° CW from PF),Ultra-Low TTV<1µm, Empak cst
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100] ±1°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
0.5-10.0
-
Thickness:
3"
-
Surface:
318 ±7
-
Grade:
SEMI Prime, 2Flats,TTV<1µm,Front-Side LaserMark, Empak cst
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
|