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Materials
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Material:
Silicon
-
Diameter:
[100]
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Type:
C/C
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Dopant:
Boron
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Growth Method:
CZ
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Orientations:
p-type Si:B
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Resistivity:
4-10
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Thickness:
4"
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Surface:
25,000 ±50
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Grade:
SEMI, 1Flat, TTV<30µm, Bow/Warp<40µm, Individual cst
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Delivery Time:
15-30 days
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$200.00 |
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$200.00 |
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Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/E
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Dopant:
Boron
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Growth Method:
CZ
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Orientations:
Intrinsic Si:-
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Resistivity:
FZ>10,000
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Thickness:
3"
-
Surface:
500
-
Grade:
SEMI Prime, 1Flat, MCC Lifetime>1,000µs, Empak cst
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Delivery Time:
15-30 days
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$80.00 |
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$80.00 |
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