× |
|
Materials
-
Material:
Silicon
-
Diameter:
150mm
-
Type:
P
-
Dopant:
Phos
-
Growth Method:
CZ
-
Orientations:
(100)
-
Resistivity:
1-100
-
Thickness:
500-600µm
-
Surface:
P/E
-
Grade:
TEST
-
Delivery Time:
15-30 days
|
$60.00 |
|
$60.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
FZ7,000-10,000
-
Thickness:
4"
-
Surface:
490
-
Grade:
SEMI Prime, 1Flat, TTV<5µm, Empak cst
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100] ±1°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
0.5-10.0
-
Thickness:
3"
-
Surface:
889 ±13
-
Grade:
SEMI Prime, 2Flats, TTV<8µm, Empak cst
-
Delivery Time:
15-30 days
|
$50.00 |
|
$50.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
100mm
-
Type:
P
-
Dopant:
Phos
-
Growth Method:
CZ
-
Orientations:
(100.00)
-
Resistivity:
1-3
-
Thickness:
350-400µm
-
Surface:
P/P
-
Grade:
PRIME
-
Delivery Time:
15-30 days
|
$100.00 |
|
$100.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
1-15
-
Thickness:
4"
-
Surface:
305
-
Grade:
SEMI Prime, 2Flats, TTV<5µm, Empak cst
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
25.4mm
-
Type:
P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
(100)
-
Resistivity:
1-20
-
Thickness:
250-300µm
-
Surface:
P/E
-
Grade:
PRIME
-
Delivery Time:
15-30 days
|
$100.00 |
|
$100.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[111] ±0.5°
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
FZ4,000-8,000
-
Thickness:
3"
-
Surface:
380
-
Grade:
SEMI Prime, 1Flat, in hard cassettes of 1 & 2 wafers
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
|