× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/EOx
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
0.01-0.02 {0.0139-0.0144}
-
Thickness:
6"
-
Surface:
625 ±15
-
Grade:
SEMI Prime, JEIDA Flat 47.5mm,Back-side LTO (0.3-0.4)µm thick, TTV<6µm, Emapk csts of 2 + 4 wafers
-
Delivery Time:
15-30 days
|
$110.00 |
|
$110.00 |
× |
|
Materials
-
Material:
Germanium
-
Type:
P
-
Dopant:
Ga
-
Growth Method:
CZ
-
Orientations:
(100)
-
Resistivity:
.01-.04
-
Thickness:
300-350µm
-
Surface:
P/P
-
Grade:
EPI
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
50.8mm
-
Type:
P
-
Dopant:
Phos
-
Growth Method:
FZ
-
Orientations:
(111.00)
-
Resistivity:
>3001
-
Thickness:
275-325µm
-
Surface:
P/E
-
Grade:
PRIME
-
Delivery Time:
15-30 days
|
$100.00 |
|
$100.00 |
× |
|
Materials
-
Material:
Germanium
-
Diameter:
100mm
-
Type:
P
-
Dopant:
Ga
-
Growth Method:
CZ
-
Orientations:
(100)
-
Resistivity:
.01-.04
-
Thickness:
450-500µm
-
Surface:
P/P
-
Grade:
EPI
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
50.8mm
-
Type:
P
-
Dopant:
Phos
-
Growth Method:
CZ
-
Orientations:
(100.00)
-
Resistivity:
1-50
-
Thickness:
5900-6100µm
-
Surface:
P/E
-
Grade:
PRIME
-
Delivery Time:
15-30 days
|
$100.00 |
|
$100.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
Intrinsic Si:-
-
Resistivity:
FZ>10,000
-
Thickness:
2"
-
Surface:
341 ±1
-
Grade:
SEMI Prime, 1Flat, MCC Lifetime>1,000µs, hard cst
-
Delivery Time:
15-30 days
|
$100.00 |
|
$100.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
1-5
-
Thickness:
3"
-
Surface:
381
-
Grade:
SEMI Prime, 1Flat, TTV<5µm,Bow/Warp<10µm,Empak cst
-
Delivery Time:
15-30 days
|
$130.00 |
|
$130.00 |
|