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Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
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Resistivity:
FZ40-90
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Thickness:
6"
-
Surface:
650 ±5
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Grade:
SEMI Prime, 1Flat (57.5mm),TTV<3µm, Empak cst
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Delivery Time:
15-30 days
|
$150.00 |
|
$150.00 |
× |
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Materials
-
Material:
Silicon
-
Diameter:
[111] ±0.5°
-
Type:
OxP/EOx
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:As
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Resistivity:
0.001-0.005
-
Thickness:
4"
-
Surface:
525
-
Grade:
SEMI Prime, 2Flats, TTV<5µm,DRY Thermal Oxide 20±2nm thick on both sides,Empak cst
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Delivery Time:
15-30 days
|
$40.00 |
|
$40.00 |
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