× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
FZ2,000-3,000
-
Thickness:
4"
-
Surface:
775
-
Grade:
SEMI Prime, 1Flat, TTV<10µm, Empak cst
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
0.5-10.0
-
Thickness:
3"
-
Surface:
315
-
Grade:
SEMI Prime, 1Flat,TTV<3µm,Empak cst
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[111] ±0.5°
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
FZ10,000-15,000
-
Thickness:
4"
-
Surface:
397
-
Grade:
SEMI Prime,Backside ACID Etched, Empak cst
-
Delivery Time:
15-30 days
|
$40.00 |
|
$40.00 |
|