× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100-9.736°towards[111]] ±0.1°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
FZ1-10
-
Thickness:
4"
-
Surface:
400 ±10
-
Grade:
SEMI Prime, 1Flat (57.5mm), TTV1,200µs, Empak cst
-
Delivery Time:
15-30 days
|
$150.00 |
|
$150.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
100mm
-
Type:
P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
(100)
-
Resistivity:
.001-.005
-
Thickness:
450-500µm
-
Surface:
P/P
-
Grade:
PRIME
-
Delivery Time:
15-30 days
|
$100.00 |
|
$100.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[111] ±0.25°
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
FZ3,000-5,000
-
Thickness:
4"
-
Surface:
525
-
Grade:
SEMI Prime, 1Flat,in Empak cassettes of 3, 3 & 4 wafers
-
Delivery Time:
15-30 days
|
$50.00 |
|
$50.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
0.5-10.0
-
Thickness:
4"
-
Surface:
890 ±15
-
Grade:
SEMITEST (Scratches), ~100 small holes through wafer in pattern, 1Flat, TTV<8µm, Empak cst
-
Delivery Time:
15-30 days
|
$50.00 |
|
$50.00 |
|