× |
|
Materials
-
Material:
Silicon
-
Diameter:
[111-4°] ±0.5°
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:As
-
Resistivity:
0.0023-0.0026
-
Thickness:
6"
-
Surface:
508 ±15
-
Grade:
SEMI Prime, 1Flat (57.5mm), TTV<8µm, in Empak cassettes of 2 & 4 wafers
-
Delivery Time:
15-30 days
|
$110.00 |
|
$110.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
50.8mm
-
Type:
P
-
Dopant:
Phos
-
Growth Method:
FZ
-
Orientations:
(111.00)
-
Resistivity:
150-200
-
Thickness:
9900-10100µm
-
Surface:
P/E
-
Grade:
PRIME
-
Delivery Time:
15-30 days
|
$100.00 |
|
$100.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
0.001-0.007
-
Thickness:
4"
-
Surface:
1,975
-
Grade:
SEMI Prime, 2Flats,Free of Striations,Individual cst sealed in a group of 5 wafers
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
|