× |
|
Materials
-
Material:
Silicon
-
Diameter:
[011] ±0.5°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
FZ NTD500-550
-
Thickness:
2"
-
Surface:
6,000 ±50
-
Grade:
Prime, 1Flat, MCC Lifetime>1,000µs, Individual cst, Group of 2 wafers
-
Delivery Time:
15-30 days
|
$150.00 |
|
$150.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[135] ±0.5°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
FZ NTD500-550
-
Thickness:
2"
-
Surface:
6,000 ±50
-
Grade:
Prime, 1Flat, MCC Lifetime>1,000µs, Individual cst, Group of 2 wafers
-
Delivery Time:
15-30 days
|
$150.00 |
|
$150.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100-4°towards[110]] ±0.5°
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
0.1-1.5 {0.52-0.63}
-
Thickness:
4"
-
Surface:
300
-
Grade:
SEMI Prime, 2Flats, TTV<5µm, Empak cst
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
|