× |
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Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
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Resistivity:
1-30
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Thickness:
2"
-
Surface:
775 ±10
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Grade:
SEMI Prime, 1Flat,TTV<1.5µm, Bow<8µm,LaserMark & Thickness, TTV, Bow data recorded for each wafer, hard cst
-
Delivery Time:
15-30 days
|
$100.00 |
|
$100.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[111] ±0.5°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
FZ2,000-4,000
-
Thickness:
4"
-
Surface:
525
-
Grade:
SEMI Prime, 2Flats, Empak cst
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
|