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Materials
-
Material:
Silicon
-
Diameter:
[111] ±0.5°
-
Type:
P/E
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Dopant:
Boron
-
Growth Method:
CZ
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Orientations:
n-type Si:P
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Resistivity:
>20
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Thickness:
2"
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Surface:
5,000 ±50
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Grade:
Prime,NO Flats, Individual cst, Group of 3 wafers
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Delivery Time:
15-30 days
|
$100.00 |
|
$100.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
1-30
-
Thickness:
2"
-
Surface:
775 ±10
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Grade:
SEMI Prime, 1Flat, TTV<5µm,LaserMark, Thickness, TTV, Bow data recorded for each wafer,hard cst
-
Delivery Time:
15-30 days
|
$100.00 |
|
$100.00 |
|