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Materials
-
Material:
Silicon
-
Diameter:
[111-4°towards[110]] ±0.5°
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Type:
P/P
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Dopant:
Boron
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Growth Method:
CZ
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Orientations:
p-type Si:B
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Resistivity:
FZ1-5
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Thickness:
3"
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Surface:
350
-
Grade:
SEMI Prime, 1Flat, TTV3,000µs, Empak cst
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
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Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
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Resistivity:
0.001-0.005
-
Thickness:
4"
-
Surface:
2,000
-
Grade:
SEMI Prime, 2Flats, Individual cst, Sold in groups of 5 wafers
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Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
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