× |
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Materials
-
Material:
Silicon
-
Diameter:
[111] ±0.5°
-
Type:
C/C
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
FZ5,000-13,000
-
Thickness:
2"
-
Surface:
6,350 ±100
-
Grade:
NO Flats, Individual cst
-
Delivery Time:
15-30 days
|
$100.00 |
|
$100.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
1-30
-
Thickness:
4"
-
Surface:
525
-
Grade:
SEMI Prime, 1Flat, Empak cst
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
C/C
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
FZ10-11
-
Thickness:
4"
-
Surface:
2,000 ±100
-
Grade:
SEMI,NO Flats, MCC Lifetime>3,460µs, Individual cst, Can be sold individually
-
Delivery Time:
15-30 days
|
$150.00 |
|
$150.00 |
|