× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
1-100
-
Thickness:
6"
-
Surface:
400
-
Grade:
SEMI Prime, 1Flat (57.5mm),TTV<10µm, Bow/Warp<20µm,Empak cst
-
Delivery Time:
15-30 days
|
$150.00 |
|
$150.00 |
× |
|
Materials
-
Material:
Gallium Arsenide
-
Diameter:
50.8mm
-
Type:
P
-
Dopant:
Si
-
Growth Method:
VGF
-
Orientations:
(100) -15
-
Resistivity:
4e18
-
Thickness:
250-300µm
-
Surface:
P/E
-
Grade:
EP!
-
Delivery Time:
15-30 days
|
$100.00 |
|
$100.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
FZ800-1,500
-
Thickness:
4"
-
Surface:
215
-
Grade:
SEMI, 1Flat, Empak cst
-
Delivery Time:
15-30 days
|
$150.00 |
|
$150.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
50.8mm
-
Type:
P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
(100)
-
Resistivity:
1-20
-
Thickness:
950-1000µm
-
Surface:
PIP
-
Grade:
PRIME
-
Delivery Time:
15-30 days
|
$50.00 |
|
$50.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[533] ±0.3°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
Intrinsic Si:-
-
Resistivity:
FZ>1,000
-
Thickness:
4"
-
Surface:
300
-
Grade:
SEMI Prime, 1Flat, TTV1,500µs, Empak cst
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
|