× |
|
Materials
-
Material:
Silicon
-
Diameter:
[510] ±0.5°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
FZ2,879-3,258
-
Thickness:
2"
-
Surface:
1,525
-
Grade:
NO Flats, Individual cst
-
Delivery Time:
15-30 days
|
$100.00 |
|
$100.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
5-10
-
Thickness:
4"
-
Surface:
2,000
-
Grade:
Good Front side, Back-Side with large scratch on back, SEMI, 1Flat, TTV<5µm, Individual cst
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
C/C
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
0.001-0.005
-
Thickness:
6"
-
Surface:
1,465
-
Grade:
SEMI, 1Flat (57.5mm), Empak cst
-
Delivery Time:
15-30 days
|
$150.00 |
|
$150.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[110] ±0.2°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
30-60 {33-41}
-
Thickness:
4"
-
Surface:
525
-
Grade:
SEMI Prime, 2Flats (PF at ±0.2°, SF at CW 109.5° from PF),TTV<3µm, Bow<15m, Warp<30µm,Empa
-
Delivery Time:
15-30 days
|
$50.00 |
|
$50.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[533] ±0.5°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:Sb
-
Resistivity:
0.010-0.023
-
Thickness:
4"
-
Surface:
300 ±15
-
Grade:
Prime, 1Flat at , TTV<5µm , Front-Side LaserMark, Empak cst
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
|