× |
|
Materials
-
Material:
Silicon
-
Diameter:
[111] ±0.5°
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
FZ>5,000
-
Thickness:
3"
-
Surface:
1,000
-
Grade:
SEMI Prime, 2Flats, Empak cst
-
Delivery Time:
15-30 days
|
$50.00 |
|
$50.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
Intrinsic Si:-
-
Resistivity:
FZ>20,000 {24,940-308,900}
-
Thickness:
4"
-
Surface:
500
-
Grade:
SEMI Prime, 1Flat, TTV1,000µs, Empak cst
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[111] ±0.1°
-
Type:
BROKEN
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
FZ>3,000
-
Thickness:
5"
-
Surface:
200 ±15
-
Grade:
BROKEN L/L wafers, in 2 pieces
-
Delivery Time:
15-30 days
|
$70.00 |
|
$70.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
0.001-0.005
-
Thickness:
25.6x25.6µm
-
Surface:
500
-
Grade:
Prime 25.6x25.6mm Silicon Frames
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
1-10
-
Thickness:
4"
-
Surface:
20,000 ±100
-
Grade:
SEMITEST {Polishing Defects}, NO Flats, in Unsealed Individual cst
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
|