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Materials
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Material:
Silicon
-
Diameter:
[111] ±0.5°
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Type:
P/P
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Dopant:
Boron
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Growth Method:
CZ
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Orientations:
Intrinsic Si:-
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Resistivity:
FZ>20,000
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Thickness:
2"
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Surface:
330
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Grade:
SEMI Prime, 1Flat, MCC Lifetime>1,000µs, hard cst
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Delivery Time:
15-30 days
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$100.00 |
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$100.00 |
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Materials
-
Material:
Silicon
-
Diameter:
[100]
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Type:
P/EOx
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Dopant:
Boron
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Growth Method:
CZ
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Orientations:
n-type Si:As
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Resistivity:
0.001-0.005 {0.0036-0.0041}
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Thickness:
6"
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Surface:
675 ±15
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Grade:
SEMI Prime, 1Flat (57.5mm), TTV<5µm, LTO (0.3-0.6)µm thick, in Empak cassettes of 7, 16, 19 wafers
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Delivery Time:
15-30 days
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$50.00 |
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$50.00 |
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