× |
|
Materials
-
Material:
Germanium
-
Diameter:
76.2mm
-
Type:
P
-
Dopant:
Ga
-
Growth Method:
CZ
-
Orientations:
(100)
-
Resistivity:
.01-.04
-
Thickness:
350-400µm
-
Surface:
P/E
-
Grade:
EPI
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
× |
|
Materials
-
Material:
Indium Phosphide
-
Diameter:
50.8mm
-
Type:
P
-
Dopant:
Zn
-
Growth Method:
VGF
-
Orientations:
(100)
-
Thickness:
275-325µm
-
Surface:
P/E
-
Grade:
PRIME
-
Delivery Time:
15-30 days
|
$50.00 |
|
$50.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
50.8mm
-
Type:
P
-
Dopant:
Phos
-
Growth Method:
CZ
-
Orientations:
(100.00)
-
Resistivity:
1-20
-
Thickness:
250-300µm
-
Surface:
P/E/WTOx
-
Grade:
PRIME
-
Delivery Time:
15-30 days
|
$100.00 |
|
$100.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
0.0012-0.0015
-
Thickness:
3"
-
Surface:
50 ±5
-
Grade:
SEMI Prime, 1Flat, TTV<8µm, Empak cst, In Groups of 2 wafers
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[110] ±0.5°
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
11-15
-
Thickness:
3"
-
Surface:
381
-
Grade:
SEMI Prime, 2Flats,TTV<15µm, Individual cst
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
1-100
-
Thickness:
6"
-
Surface:
475
-
Grade:
SEMI, 1Flat (57.5mm), TTV<5µm, Bow/Warp<15µm, with LaserMark, Empak cst
-
Delivery Time:
15-30 days
|
$110.00 |
|
$110.00 |
|