× |
|
Materials
-
Material:
Silicon
-
Diameter:
[111-3°] ±0.5°
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
>10
-
Thickness:
2"
-
Surface:
600
-
Grade:
SEMI Prime, 1Flat,TTV<3µm, Bow/Warp<3µm,hard cst
-
Delivery Time:
15-30 days
|
$100.00 |
|
$100.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
1-100
-
Thickness:
40µm
-
Surface:
250
-
Grade:
SEMI Prime, 1Flat, Individual cst, in Pack of 5 wafers
-
Delivery Time:
15-30 days
|
$100.00 |
|
$100.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
1-30
-
Thickness:
3"
-
Surface:
381
-
Grade:
SEMI Prime, 2Flats, Empak cst
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
50.8mm
-
Type:
P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
(100)
-
Resistivity:
1-20
-
Thickness:
140-160µm
-
Surface:
P/P
-
Grade:
PRIME
-
Delivery Time:
15-30 days
|
$60.00 |
|
$60.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
1-100
-
Thickness:
6"
-
Surface:
700
-
Grade:
SEMI notch Prime, Empak cst
-
Delivery Time:
15-30 days
|
$150.00 |
|
$150.00 |
|