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Materials
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Material:
Silicon
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Diameter:
[111] ±2°
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Type:
C/C
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Dopant:
Boron
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Growth Method:
CZ
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Orientations:
Intrinsic Si:-
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Resistivity:
FZ>10,000
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Thickness:
0.39"
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Surface:
27,870 ±100
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Grade:
Single Crystal Silicon Rod, 9.9mmØ × 27.9±0.1mm,NO Flats
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Delivery Time:
15-30 days
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$90.00 |
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$90.00 |
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Materials
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Material:
Silicon
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Diameter:
[100]
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Type:
P/P
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Dopant:
Boron
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Growth Method:
CZ
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Orientations:
n-type Si:P
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Resistivity:
1-100
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Thickness:
6"
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Surface:
2,950 ±50
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Grade:
SEMI Prime, 1Flat (57.5mm), Sold as packs of 3 wafers
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Delivery Time:
15-30 days
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$150.00 |
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$150.00 |
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