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Materials
-
Material:
Germanium
-
Diameter:
50.8mm
-
Type:
P
-
Dopant:
Ga
-
Growth Method:
CZ
-
Orientations:
(100)
-
Resistivity:
.01-.04
-
Thickness:
350-400µm
-
Surface:
P/E
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Grade:
EPI
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Delivery Time:
15-30 days
|
$200.00 |
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$200.00 |
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Materials
-
Material:
Silicon
-
Diameter:
[111] ±0.5°
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Type:
P/P
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Dopant:
Boron
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Growth Method:
CZ
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Orientations:
Intrinsic Si:-
-
Resistivity:
FZ>20,000
-
Thickness:
4"
-
Surface:
525
-
Grade:
SEMI Prime, 1Flat, TTV1,000µs, Empak cst
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
FZ40-90
-
Thickness:
6"
-
Surface:
675 ±5
-
Grade:
SEMI Prime, 1Flat (57.5mm),TTV<3µm, Empak cst
-
Delivery Time:
15-30 days
|
$150.00 |
|
$150.00 |
|