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Materials
-
Material:
Silicon
-
Diameter:
[111]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
4-7
-
Thickness:
3"
-
Surface:
2,300
-
Grade:
SEMI Prime, 1Flat, Individual cst, In Group of 8 wafers
-
Delivery Time:
15-30 days
|
$130.00 |
|
$130.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100-10°towards[110]] ±0.5°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
FZ800-1,000
-
Thickness:
6"
-
Surface:
300
-
Grade:
SEMI Prime, 1Flat, MCC Lifetime>1,000µs, Empak cst
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
|