× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
Intrinsic Si:-
-
Resistivity:
FZ>20,000
-
Thickness:
4"
-
Surface:
525
-
Grade:
SEMI Prime, 1Flat, MCC Lifetime>1,000µs, Back-side Acid-Etched, TTV<10µm, Bow<15µm, Warp<30µm, Empak cst
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
× |
|
Materials
-
Material:
Clean Room
-
Diameter:
38.1mm
-
Type:
Single Wafer Shipper
-
Dopant:
ePak
-
Growth Method:
Lid/Base/Spring
-
Resistivity:
Holds1Wafer
-
Thickness:
N/A
-
Surface:
N/A
-
Grade:
Clean
-
Delivery Time:
15-30 days
|
$50.00 |
|
$50.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
10-35
-
Thickness:
6"
-
Surface:
3,093 ±50
-
Grade:
SEMI, 1Flat (57.5mm), Individual cst, Sold in groups of 1 wafer
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
Intrinsic Si:-
-
Resistivity:
FZ>20,000
-
Thickness:
4"
-
Surface:
500
-
Grade:
SEMI Prime, 1Flat, TTV1,000µs, Empak cst
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
1-20
-
Thickness:
4"
-
Surface:
525 ±35
-
Grade:
SEMI Prime, 2Flats,TTV<2µm,Empak cst
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[522]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
10-35
-
Thickness:
6"
-
Surface:
625
-
Grade:
Prime, 2Flats, Empak cst
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
|