× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
4-6
-
Thickness:
4"
-
Surface:
475
-
Grade:
SEMI Prime, 2Flats,TTV<2µm,Empak cst
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
50.8mm
-
Type:
P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
(111)
-
Resistivity:
1-20
-
Thickness:
225-275µm
-
Surface:
P/P
-
Grade:
PRIME
-
Delivery Time:
15-30 days
|
$50.00 |
|
$50.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
FZ>1,500
-
Thickness:
4"
-
Surface:
725
-
Grade:
SEMI Prime, 2Flats, TTV1,000µs, Empak cst
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
25-30
-
Thickness:
6"
-
Surface:
3,050 ±50
-
Grade:
SEMI Prime, 1Flat (57.5mm), TTV<5µm,Groups of 5 wafers
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
|