× |
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Materials
-
Material:
Silicon
-
Diameter:
[112-5°towards[11-1]] ±0.5°
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Type:
P/P
-
Dopant:
Boron
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Growth Method:
CZ
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Orientations:
n-type Si:P
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Resistivity:
FZ>100
-
Thickness:
4"
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Surface:
762
-
Grade:
SEMI Prime, 1Flat,TTV<3µm, Empak cst
-
Delivery Time:
15-30 days
|
$50.00 |
|
$50.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
25-30
-
Thickness:
6"
-
Surface:
3,093 ±50
-
Grade:
SEMI Prime, 1Flat (57.5mm), TTV<5µm,Groups of 2 + 10 wafers
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
|