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Materials
-
Material:
Silicon
-
Diameter:
[100] ±1°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
FZ4.6-4.8
-
Thickness:
4"
-
Surface:
285 ±3
-
Grade:
PV SEMI Prime, 2Flats,TTV6,202µs,Empak cst
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
5-25 {9-24}
-
Thickness:
8"
-
Surface:
725
-
Grade:
SEMI Prime, Notch, TTV<5µm, Bow<20µm, Warp<40µm, Empak cst
-
Delivery Time:
15-30 days
|
$90.00 |
|
$90.00 |
|