× |
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Materials
-
Material:
Silicon
-
Diameter:
[100-9.74°towards[111]] ±0.1°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
FZ50-100
-
Thickness:
6"
-
Surface:
480
-
Grade:
SEMI Prime, 1Flat (57.5mm), Empak cst, TTV15,000µ
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100] ±1°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
1-100
-
Thickness:
12"
-
Surface:
775
-
Grade:
SEMI Prime Notch, TTV<5µm, Bow<10µm, Warp<30µm, Empak cst
-
Delivery Time:
15-30 days
|
$140.00 |
|
$140.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
C/C
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
Intrinsic Si:-
-
Resistivity:
FZ>20,000
-
Thickness:
6"
-
Surface:
3,250 ±100
-
Grade:
SEMI,NO Flats, MCC Lifetime>1,000µs, No Edge Rounding (minor edge-chips), Individual cst
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
|