× |
|
Materials
-
Material:
Silicon
-
Diameter:
[311] ±1°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
10-35
-
Thickness:
6"
-
Surface:
650
-
Grade:
TEST (Scratched),2Flats, in unsealed Empak cst
-
Delivery Time:
15-30 days
|
$200.00 |
|
$400.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100] ±1°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
8-12
-
Thickness:
12"
-
Surface:
775
-
Grade:
SEMI Prime, Notch, Backside LaserMark,TTV<3µm, Bow/Warp<40µm, Empak cst
-
Delivery Time:
15-30 days
|
$150.00 |
|
$150.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
Intrinsic Si:-
-
Resistivity:
FZ>10,000
-
Thickness:
8"
-
Surface:
725
-
Grade:
SEMI Prime, Notch, MCC Lifetime>1,000µs, Empak cst
-
Delivery Time:
15-30 days
|
$160.00 |
|
$160.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
5-10
-
Thickness:
6"
-
Surface:
6,350
-
Grade:
Prime,NO Flats, Sealed in a multi-wafer box of 5 wafers
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
|