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Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
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Dopant:
Boron
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Growth Method:
CZ
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Orientations:
n-type Si:P
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Resistivity:
5-35
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Thickness:
6"
-
Surface:
762 ±12
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Grade:
Prime, 1Flat,TTV<1µm,Empak cst
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Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
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Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
C/C
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
Intrinsic Si:-
-
Resistivity:
FZ>20,000
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Thickness:
6"
-
Surface:
3,250 ±100
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Grade:
SEMI,NO Flats, MCC Lifetime>1,000µs, No Edge Rounding (minor edge-chips), Individual cst
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Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
|