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Materials
-
Material:
Silicon
-
Diameter:
[100] ±1°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
FZ>9,500
-
Thickness:
6"
-
Surface:
1,000 ±50
-
Grade:
SEMI Prime, 1Flat (57.5mm),MCC Lifetime>6,000µs,Empak cst
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
C/C
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
Intrinsic Si:-
-
Resistivity:
FZ>20,000
-
Thickness:
6"
-
Surface:
3,250 ±100
-
Grade:
SEMI,NO Flats, MCC Lifetime>1,000µs, No Edge Rounding (minor edge-chips), Individual cst
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
5-10
-
Thickness:
6"
-
Surface:
6,350
-
Grade:
Prime,NO Flats, Sealed in a multi-wafer box of 5 wafers
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
|