× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
Intrinsic Si:-
-
Resistivity:
FZ>20,000 {22,000-26,000}
-
Thickness:
2"
-
Surface:
500
-
Grade:
SEMI Prime, 1Flat, MCC Lifetime>1,000µs, TTV<5µm, Bow/Warp<20µm, hard cst
-
Delivery Time:
15-30 days
|
$50.00 |
|
$50.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100-4°] ±0.5°
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
0.01-0.02
-
Thickness:
4"
-
Surface:
381
-
Grade:
SEMI Prime, 2Flats, Empak cst
-
Delivery Time:
15-30 days
|
$40.00 |
|
$40.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100-9.74°towards[111]] ±0.1°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
FZ50-100
-
Thickness:
6"
-
Surface:
480
-
Grade:
SEMI Prime, 1Flat (57.5mm), Empak cst, TTV15,000µ
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100] ±1°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
FZ>9,500
-
Thickness:
6"
-
Surface:
1,000 ±50
-
Grade:
SEMI Prime, 1Flat (57.5mm),MCC Lifetime>6,000µs,Empak cst
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
|